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Title: Near-Field Enhanced Negative Luminescent Refrigeration

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1298341
Grant/Contract Number:
SC0001293
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 6; Journal Issue: 2; Related Information: CHORUS Timestamp: 2016-08-18 18:10:47; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chen, Kaifeng, Santhanam, Parthiban, and Fan, Shanhui. Near-Field Enhanced Negative Luminescent Refrigeration. United States: N. p., 2016. Web. doi:10.1103/PhysRevApplied.6.024014.
Chen, Kaifeng, Santhanam, Parthiban, & Fan, Shanhui. Near-Field Enhanced Negative Luminescent Refrigeration. United States. doi:10.1103/PhysRevApplied.6.024014.
Chen, Kaifeng, Santhanam, Parthiban, and Fan, Shanhui. 2016. "Near-Field Enhanced Negative Luminescent Refrigeration". United States. doi:10.1103/PhysRevApplied.6.024014.
@article{osti_1298341,
title = {Near-Field Enhanced Negative Luminescent Refrigeration},
author = {Chen, Kaifeng and Santhanam, Parthiban and Fan, Shanhui},
abstractNote = {},
doi = {10.1103/PhysRevApplied.6.024014},
journal = {Physical Review Applied},
number = 2,
volume = 6,
place = {United States},
year = 2016,
month = 8
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevApplied.6.024014

Citation Metrics:
Cited by: 2works
Citation information provided by
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  • Trench-type narrow InGaAs quantum-wire field-effect transistors (QWR-FETs) have been fabricated on (311)A InP V-groove substrates by hydrogen-assisted molecular-beam epitaxy. Enhanced negative differential resistance (NDR) effects with a peak-to-valley ratio (PVR) as high as 13.3 have been observed at an onset voltage of 0.16 V in the QWR-FETs at 24 K. The PVR increased with reductions in the InGaAs epitaxial layer thickness, which caused an enhanced mobility difference between the QWR and side quantum wells (QWs). This forms a velocity modulation transistor based on the real-space transfer of electrons from the high mobility QWR to the low mobility side QWs. Themore » NDR effects were observed up to 230 K as the gate length was decreased to 50 nm. A unique feature of the QWR-FET is that NDR effects are controllable with the gate bias in a three-terminal configuration.« less
  • Microstructural evolution of bias-enhanced grown (BEG) ultrananocrystalline diamond (UNCD) films has been investigated using microwave plasma enhanced chemical vapor deposition in gas mixtures of CH{sub 4} and Ar under different negative bias voltages ranging from −50 to −200 V. Scanning electron microscopy and Raman spectroscopy were used to characterize the morphology, growth rate, and chemical bonding of the synthesized films. Transmission electron microscopic investigation reveals that the application of bias voltage induced the formation of the nanographitic filaments in the grain boundaries of the films, in addition to the reduction of the size of diamond grains to ultra-nanosized granular structured grains.more » For BEG-UNCD films under −200 V, the electron field emission (EFE) process can be turned on at a field as small as 4.08 V/μm, attaining a EFE current density as large as 3.19 mA/cm{sup 2} at an applied field of 8.64 V/μm. But the films grown without bias (0 V) have mostly amorphous carbon phases in the grain boundaries, possessing poorer EFE than those of the films grown using bias. Consequently, the induction of nanographitic filaments in grain boundaries of UNCD films grown in CH{sub 4}/Ar plasma due to large applied bias voltage of −200 V is the prime factor, which possibly forms interconnected paths for facilitating the transport of electrons that markedly enhance the EFE properties.« less
  • Electron field emission (EFE) properties of nanocrystalline diamond (NCD) films synthesized by the bias-enhanced growth (beg) process under different bias voltages were investigated. The induction of the nanographitic phases is presumed to be the prime factor in enhancing the EFE properties of negative biased NCD films. Transmission electron microscopic investigations reveal that a negative bias voltage of −300 V increases the rate of growth for NCD films with the size of the grains changing from nano to ultranano size. This effect also is accompanied by the induction of nanographitic filaments in the grain boundaries of the films. The turn-on field (E{submore » 0}) for the EFE process then effectively gets reduced. The EFE process of the beg-NCD{sub −300V} films can be turned on at E{sub 0} = 3.86 V/μm, and the EFE current density achieved is 1.49 mA/cm{sup 2} at an applied field of 7.85 V/μm. On the other hand, though a positive-bias beg process (+200 V) results in the reduction of grain size, it does not induce sufficient nanographitic phases to lower the E{sub 0} value of the EFE process. Moreover, the optical emission spectroscopic investigation indicates that one of the primary causes that changes the granular structure of the NCD films is the increase in the proportion of C{sub 2} and CH species induced in the growing plasma. The polarity of the bias voltage is of less importance in the microstructural evolution of the films.« less