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Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

Patent ·
OSTI ID:1295657
; ;
A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357; SC0009572
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL)
Patent Number(s):
9,418,814
Application Number:
14/594,949
OSTI ID:
1295657
Country of Publication:
United States
Language:
English

References (4)

Planar ultrananocrystalline diamond field emitter in accelerator radio frequency electron injector: Performance metrics journal November 2014
High quantum efficiency ultrananocrystalline diamond photocathode for photoinjector applications
  • Pérez Quintero, Kenneth J.; Antipov, Sergey; Sumant, Anirudha V.
  • Applied Physics Letters, Vol. 105, Issue 12, Article No. 123103 https://doi.org/10.1063/1.4896418
journal September 2014
Properties of Hydrogen Terminated Diamond as a Photocathode journal March 2011
Polycrystalline diamond films as prospective UV photocathodes conference December 2000

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Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY