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Title: Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials

Abstract

A nanomesh phononic structure includes: a sheet including a first material, the sheet having a plurality of phononic-sized features spaced apart at a phononic pitch, the phononic pitch being smaller than or equal to twice a maximum phonon mean free path of the first material and the phononic size being smaller than or equal to the maximum phonon mean free path of the first material.

Inventors:
; ;
Publication Date:
Research Org.:
CALIFORNIA INSTITUTE OF TECHNOLOGY, Pasadena, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1295611
Patent Number(s):
9,419,198
Application Number:
13/278,074
Assignee:
CALIFORNIA INSTITUTE OF TECHNOLOGY (Pasadena, CA) CHO
DOE Contract Number:
FG02-04ER46175
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Oct 20
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION

Citation Formats

Yu, Jen-Kan, Mitrovic, Slobodan, and Heath, James R. Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials. United States: N. p., 2016. Web.
Yu, Jen-Kan, Mitrovic, Slobodan, & Heath, James R. Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials. United States.
Yu, Jen-Kan, Mitrovic, Slobodan, and Heath, James R. Tue . "Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials". United States. doi:. https://www.osti.gov/servlets/purl/1295611.
@article{osti_1295611,
title = {Nanomesh phononic structures for low thermal conductivity and thermoelectric energy conversion materials},
author = {Yu, Jen-Kan and Mitrovic, Slobodan and Heath, James R.},
abstractNote = {A nanomesh phononic structure includes: a sheet including a first material, the sheet having a plurality of phononic-sized features spaced apart at a phononic pitch, the phononic pitch being smaller than or equal to twice a maximum phonon mean free path of the first material and the phononic size being smaller than or equal to the maximum phonon mean free path of the first material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 16 00:00:00 EDT 2016},
month = {Tue Aug 16 00:00:00 EDT 2016}
}

Patent:

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