skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Wide bandgap matrix switcher, amplifier and oscillator

Abstract

An electronic device comprising an optical gate, an electrical input an electrical output and a wide bandgap material positioned between the electrical input and the electrical output to control an amount of current flowing between the electrical input and the electrical output in response to a stimulus received at the optical gate can be used in wideband telecommunication applications in transmission of multi-channel signals.

Inventors:
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1295558
Patent Number(s):
9,419,721
Application Number:
14/218,895
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA) LLNL
DOE Contract Number:
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Mar 18
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 42 ENGINEERING

Citation Formats

Sampayan, Stephen. Wide bandgap matrix switcher, amplifier and oscillator. United States: N. p., 2016. Web.
Sampayan, Stephen. Wide bandgap matrix switcher, amplifier and oscillator. United States.
Sampayan, Stephen. 2016. "Wide bandgap matrix switcher, amplifier and oscillator". United States. doi:. https://www.osti.gov/servlets/purl/1295558.
@article{osti_1295558,
title = {Wide bandgap matrix switcher, amplifier and oscillator},
author = {Sampayan, Stephen},
abstractNote = {An electronic device comprising an optical gate, an electrical input an electrical output and a wide bandgap material positioned between the electrical input and the electrical output to control an amount of current flowing between the electrical input and the electrical output in response to a stimulus received at the optical gate can be used in wideband telecommunication applications in transmission of multi-channel signals.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 8
}

Patent:

Save / Share:
  • A photocell comprises a p-i-n amorphous silicon structure having a wide bandgap layer adjacent to either the p-type or n-type layer. This structure reduces the absorption of light entering the photocell and the back-diffusion of minority carriers.
  • A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.
  • The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.
  • A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced atmore » the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.« less
  • A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al 2O 3 substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values ofmore » 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.« less