Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates

Zhang, L. H.; Lu, T. -M.; Kisslinger, K.; and Wang, G. -C.

doi:10.1039/C5CE02579F

Title: Orientation epitaxy of Ge_1–xSn_x films grown on single crystal CaF₂ substrates

Journal Article · Tue Mar 15 00:00:00 EDT 2016 · CrystEngComm

DOI:https://doi.org/10.1039/C5CE02579F· OSTI ID:1295206

Zhang, L. H. ^[1]; Lu, T. -M. ^[2]; Kisslinger, K. ^[1]; and Wang, G. -C. ^[2]

Brookhaven National Lab. (BNL), Upton, NY (United States)
Rensselaer Polytechnic Inst., Troy, NY (United States)

Ge_1–xSn_x films were grown via physical vapor deposition below the crystallization temperature of Ge on single crystal (111) and (100) CaF₂ substrates to assess the role of Sn alloying in Ge crystallization. By studying samples grown at several growth temperatures ranging from 250 °C to 400 °C we report temperature-dependent trends in several of the films' properties. X-ray diffraction theta vs. two-theta (θ/2θ) scans indicate single orientation Ge_1–xSn_x(111) films are grown on CaF₂(111) substrates at each temperature, while a temperature-dependent superposition of (111) and (100) orientations are exhibited in films grown on CaF2(100) above 250 °C. This is the first report of (111) oriented Ge_1–xSn_x grown on a (100) oriented CaF₂ substrate, which is successfully predicted by a superlattice area matching model. These results are confirmed by X-ray diffraction pole figure analysis. θ/2θ results indicate substitutional Sn alloying in each film of about 5%, corroborated by energy dispersive spectroscopy. In addition, morphological and electrical properties are measured by scanning electron microscopy, atomic force microscopy and Hall mobility measurements and are also shown to be dependent upon growth temperature.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704

OSTI ID:: 1295206

Report Number(s):: BNL-112305-2016-JA; CRECF4; R&D Project: 16060; KC0403020

Journal Information:: CrystEngComm, Vol. 18, Issue 15; ISSN 1466-8033

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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References (45)

TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon Kouvetakis, J.; Menendez, J.; Chizmeshya, A. V. G. Annual Review of Materials Research, Vol. 36, Issue 1 https://doi.org/10.1146/annurev.matsci.36.090804.095159	journal	August 2006
Ge1−xSnx alloys pseudomorphically grown on Ge(001) Ladrón de Guevara, H. Pérez; Rodrı́guez, A. G.; Navarro-Contreras, H. Applied Physics Letters, Vol. 83, Issue 24 https://doi.org/10.1063/1.1634374	journal	December 2003
Strain Field Mapping of Dislocations in a Ge/Si Heterostructure Liu, Quanlong; Zhao, Chunwang; Su, Shaojian PLoS ONE, Vol. 8, Issue 4 https://doi.org/10.1371/journal.pone.0062672	journal	April 2013
X-ray line broadening from filed aluminium and wolfram Williamson, G. K.; Hall, W. H. Acta Metallurgica, Vol. 1, Issue 1 https://doi.org/10.1016/0001-6160(53)90006-6	journal	January 1953
Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment Li, H.; Cui, Y. X.; Wu, K. Y. Applied Physics Letters, Vol. 102, Issue 25 https://doi.org/10.1063/1.4812490	journal	June 2013
Occurrence of Rotation Domains in Heteroepitaxy Grundmann, Marius; Böntgen, Tammo; Lorenz, Michael Physical Review Letters, Vol. 105, Issue 14 https://doi.org/10.1103/PhysRevLett.105.146102	journal	September 2010
Photoconductivity of germanium tin alloys grown by molecular beam epitaxy Coppinger, Matthew; Hart, John; Bhargava, Nupur Applied Physics Letters, Vol. 102, Issue 14 https://doi.org/10.1063/1.4800448	journal	April 2013
Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser Sun, G.; Soref, R. A.; Cheng, H. H. Journal of Applied Physics, Vol. 108, Issue 3 https://doi.org/10.1063/1.3467766	journal	August 2010
Atomistic modeling of β-Sn surface energies and adatom diffusivity Sellers, Michael S.; Schultz, Andrew J.; Basaran, Cemal Applied Surface Science, Vol. 256, Issue 13 https://doi.org/10.1016/j.apsusc.2010.02.038	journal	April 2010
Direct Measurements of the Surface Energies of Crystals Gilman, John J. Journal of Applied Physics, Vol. 31, Issue 12 https://doi.org/10.1063/1.1735524	journal	December 1960
Ge–Sn semiconductors for band-gap and lattice engineering Bauer, M.; Taraci, J.; Tolle, J. Applied Physics Letters, Vol. 81, Issue 16 https://doi.org/10.1063/1.1515133	journal	October 2002
The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction Ayers, J. E. Journal of Crystal Growth, Vol. 135, Issue 1-2 https://doi.org/10.1016/0022-0248(94)90727-7	journal	January 1994
Observation of a new Al(111)/Si(111) orientational epitaxy Yapsir, A. S.; Choi, C. ‐H.; Lu, T. ‐M. Journal of Applied Physics, Vol. 67, Issue 2 https://doi.org/10.1063/1.345734	journal	January 1990
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition Vincent, B.; Gencarelli, F.; Bender, H. Applied Physics Letters, Vol. 99, Issue 15 https://doi.org/10.1063/1.3645620	journal	October 2011
Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers Peng, C. S.; Zhao, Z. Y.; Chen, H. Applied Physics Letters, Vol. 72, Issue 24 https://doi.org/10.1063/1.121579	journal	June 1998
Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications Mathews, Jay; Roucka, Radek; Xie, Junqi Applied Physics Letters, Vol. 95, Issue 13 https://doi.org/10.1063/1.3238327	journal	September 2009
Temperature dependent biaxial texture evolution in Ge films under oblique angle vapor deposition Snow, P.; Gaire, C.; Lu, T. -M. Thin Solid Films, Vol. 519, Issue 16 https://doi.org/10.1016/j.tsf.2011.02.061	journal	June 2011
Totally relaxed Ge _x Si _{1− x} layers with low threading dislocation densities grown on Si substrates Fitzgerald, E. A.; Xie, Y. ‐H.; Green, M. L. Applied Physics Letters, Vol. 59, Issue 7 https://doi.org/10.1063/1.105351	journal	August 1991
In situ transmission electron microscopy observations of the crystallization of amorphous Ge films Cao, Z. H.; Liu, P.; Meng, X. K. Applied Physics A, Vol. 94, Issue 2 https://doi.org/10.1007/s00339-008-4818-2	journal	August 2008
Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(001) substrates Su, Shaojian; Wang, Wei; Cheng, Buwen Journal of Crystal Growth, Vol. 317, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.01.015	journal	February 2011
Type B epitaxy of Ge on CaF2(111) surface Chan, T. -L.; Gaire, C.; Lu, T. -M. Surface Science, Vol. 604, Issue 19-20 https://doi.org/10.1016/j.susc.2010.06.008	journal	September 2010
Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy Bhargava, Nupur; Coppinger, Matthew; Prakash Gupta, Jay Applied Physics Letters, Vol. 103, Issue 4 https://doi.org/10.1063/1.4816660	journal	July 2013
Epitaxial growth of CdTe thin film on cube-textured Ni by metal-organic chemical vapor deposition Gaire, C.; Rao, S.; Riley, M. Thin Solid Films, Vol. 520, Issue 6 https://doi.org/10.1016/j.tsf.2011.09.019	journal	January 2012
The estimation of dislocation densities in metals from X-ray data Gay, P.; Hirsch, P. B.; Kelly, A. Acta Metallurgica, Vol. 1, Issue 3 https://doi.org/10.1016/0001-6160(53)90106-0	journal	May 1953
Analysis of Thin‐Film Germanium Epitaxially Deposited onto Calcium Fluoride Pundsack, Arnold L. Journal of Applied Physics, Vol. 34, Issue 8 https://doi.org/10.1063/1.1702735	journal	August 1963
Formation of epitaxial domains: Unified theory and survey of experimental results Grundmann, Marius physica status solidi (b), Vol. 248, Issue 4 https://doi.org/10.1002/pssb.201046530	journal	January 2011
High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon Roucka, Radek; Mathews, Jay; Weng, Change IEEE Journal of Quantum Electronics, Vol. 47, Issue 2 https://doi.org/10.1109/JQE.2010.2077273	journal	February 2011
Lattice match: An application to heteroepitaxy Zur, A.; McGill, T. C. Journal of Applied Physics, Vol. 55, Issue 2 https://doi.org/10.1063/1.333084	journal	January 1984
Hole mobility and Poole‐Frenkel effect in CdTe Ottaviani, G.; Canali, C.; Jacoboni, C. Journal of Applied Physics, Vol. 44, Issue 1 https://doi.org/10.1063/1.1661888	journal	January 1973
Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers Chang, Guo-En; Chang, Shu-Wei; Chuang, Shun Lien IEEE Journal of Quantum Electronics, Vol. 46, Issue 12 https://doi.org/10.1109/JQE.2010.2059000	journal	December 2010
Orientational domains in metalorganic chemical vapor deposited CdTe(111) film on cube-textured Ni Wang, G. -C.; Zhang, L. H.; Kisslinger, Kim Thin Solid Films, Vol. 531 https://doi.org/10.1016/j.tsf.2013.01.082	journal	March 2013
Morphology and texture evolution of nanostructured CaF ₂ films on amorphous substrates under oblique incidence flux Gaire, C.; Snow, P.; Chan, T-L Nanotechnology, Vol. 21, Issue 44 https://doi.org/10.1088/0957-4484/21/44/445701	journal	October 2010
Metal-enhanced Ge _1−x Sn _x alloy film growth on glass substrates using a biaxial CaF ₂ buffer layer Dash, J. K.; Chen, L.; Lu, T. -M. CrystEngComm, Vol. 16, Issue 37 https://doi.org/10.1039/C4CE01228C	journal	January 2014
Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness Bratland, K. A.; Foo, Y. L.; Spila, T. Journal of Applied Physics, Vol. 97, Issue 4 https://doi.org/10.1063/1.1848188	journal	February 2005
FIRST-PRINCIPLES CALCULATIONS OF THE CaF ₂ (111), (110), AND (100) SURFACE ELECTRONIC AND BAND STRUCTURE Eglitis, R. I.; Shi, H.; Borstel, G. Surface Review and Letters, Vol. 13, Issue 02n03 https://doi.org/10.1142/S0218625X06008190	journal	April 2006
Substrate temperature dependence of the texture quality in YBCO thin films fabricated by on-axis pulsed-laser ablation Low, B. L.; Xu, S. Y.; Ong, C. K. Superconductor Science and Technology, Vol. 10, Issue 1 https://doi.org/10.1088/0953-2048/10/1/006	journal	January 1997
The epitaxial growth of Ge single‐crystal films on a CaF ₂ /sapphire substrate Barkai, M.; Grünbaum, E.; Deutscher, G. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 9, Issue 5 https://doi.org/10.1116/1.577218	journal	September 1991
Biaxially oriented CaF2 films on amorphous substrates Li, H. -F.; Parker, T.; Tang, F. Journal of Crystal Growth, Vol. 310, Issue 15 https://doi.org/10.1016/j.jcrysgro.2008.04.040	journal	July 2008
Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy Werner, J.; Oehme, M.; Schmid, M. Applied Physics Letters, Vol. 98, Issue 6 https://doi.org/10.1063/1.3555439	journal	February 2011
Small angle grain boundary Ge films on biaxial CaF2/glass substrate Gaire, C.; Clemmer, P. C.; Li, H. -F. Journal of Crystal Growth, Vol. 312, Issue 4 https://doi.org/10.1016/j.jcrysgro.2009.11.051	journal	February 2010
III. Dislocation densities in some annealed and cold-worked metals from measurements on the X-ray debye-scherrer spectrum Williamson, G. K.; Smallman, R. E. Philosophical Magazine, Vol. 1, Issue 1 https://doi.org/10.1080/14786435608238074	journal	January 1956
Growth of silicon based germanium tin alloys Kasper, E.; Werner, J.; Oehme, M. Thin Solid Films, Vol. 520, Issue 8 https://doi.org/10.1016/j.tsf.2011.10.114	journal	February 2012
Surface Energy of Germanium and Silicon Jaccodine, R. J. Journal of The Electrochemical Society, Vol. 110, Issue 6 https://doi.org/10.1149/1.2425806	journal	January 1963
Molecular approaches to p- and n-nanoscale doping of Ge1−ySny semiconductors: Structural, electrical and transport properties Xie, Junqi; Tolle, J.; D’Costa, V. R. Solid-State Electronics, Vol. 53, Issue 8 https://doi.org/10.1016/j.sse.2009.04.013	journal	August 2009
Electronic band structures of Ge _1−x Sn _x semiconductors: A first-principles density functional theory study Lee, Ming-Hsien; Liu, Po-Liang; Hong, Yung-An Journal of Applied Physics, Vol. 113, Issue 6 https://doi.org/10.1063/1.4790362	journal	February 2013

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36 MATERIALS SCIENCE
Ge1-xSnx films
orientation epitaxy
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Title: Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates

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Title: Orientation epitaxy of Ge_1–xSn_x films grown on single crystal CaF₂ substrates