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Title: Inductively Coupled Plasma Etching of Benzocyclobutene with SF6 Chemistry.


Abstract not provided.

; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Proposed for presentation at the International conference on electron, ion and photon beam technology and nanofabrication held May 29 - June 1, 2012 in Waikoloa, HI.
Country of Publication:
United States

Citation Formats

Douglas, Erica Ann, Stevens, Jeffrey, Shul, Randy John, and Pearton, Stephen J. Inductively Coupled Plasma Etching of Benzocyclobutene with SF6 Chemistry.. United States: N. p., 2012. Web.
Douglas, Erica Ann, Stevens, Jeffrey, Shul, Randy John, & Pearton, Stephen J. Inductively Coupled Plasma Etching of Benzocyclobutene with SF6 Chemistry.. United States.
Douglas, Erica Ann, Stevens, Jeffrey, Shul, Randy John, and Pearton, Stephen J. 2012. "Inductively Coupled Plasma Etching of Benzocyclobutene with SF6 Chemistry.". United States. doi:.
title = {Inductively Coupled Plasma Etching of Benzocyclobutene with SF6 Chemistry.},
author = {Douglas, Erica Ann and Stevens, Jeffrey and Shul, Randy John and Pearton, Stephen J.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2012,
month = 5

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  • Low gas pressure, high plasma density etching tools are becoming predominate in industry for rapid, uniform small feature etching. In these reactors, surface reactions take on greater importance since the rate of volumetric collisions is smaller while the reactive fluxes to surfaces are larger. The authors have developed a Monte Carlo simulation to investigate surface reactions and the disposition of etching products in high plasma density reactors, and inductively coupled plasma (ICP) tools in particular. Time dependent electric fields and source functions for radicals and ions are obtained from a companion hybrid plasma equipment model. Monte Carlo techniques are thenmore » used to track the trajectories of radicals and ions, volumetric reactions and surface reactions. An etch model for poly-Si in chlorine chemistries based on the work of Dane and Mantei is implemented in which the local etch rate is proportional to the neutral radical fluxes and ion power flux. Predicted etching rates for poly-Si using chlorine chemistries are compared to experiments performed in ICP reactors. The effect of the etchant on the plasma chemistry, and hence on the etch rate, is discussed. A 3-dimensional visualization of fluxes of plasma species is presented.« less
  • Inductively Coupled Plasma (ICP) reactors are being developed as high plasma density, low gas pressure sources for etching and deposition of semiconductor materials. In this paper, the authors describe a 3-dimensional, time dependent model for ICP reactors whose intent is to provide an infrastructure to investigate asymmetries in plasma etching and deposition tools. The model is a 3-dimensional extension of a previously described 2-dimensional simulation called the Hybrid Plasma Equipment Model (HPEM). HPEM-3D consists of an electromagnetics module (EMM), a Boltzmann-electron energy module (BEM) and a fluid-chemical kinetics simulation (FKS). The inductively coupled electromagnetic fields are produced by the EMM.more » Results from HPEM-3D will be discussed for reactors using etching (Cl{sub 2}, BCl{sub 3}) and non-etching (Ar, Ar/N{sub 2}) gas mixtures, and which have geometrical asymmetries such as wafer clamps and load-lock bays. The authors show how details in the design of the coil, such as the value of the termination capacitance or number of turns, lead to azimuthal variations in the inductive electric field.« less
  • Abstract not provided.
  • Inductively coupled plasma (ICP)–reactive ion etching (RIE) patterning is a standard processing step for UV and optical photonic devices based on III-nitride materials. There is little research on ICP-RIE of high Al-content AlGaN alloys and for nonpolar nitride orientations. The authors present a comprehensive study of the ICP-RIE of c- and a-plane AlGaN in Cl{sub 2}/Ar plasma over the entire Al composition range. The authors find that the etch rate decreases in general with increasing Al content, with different behavior for c- and a-plane AlGaN. They also study the effect of BCl{sub 3} deoxidizing plasma pretreatment. An ICP deoxidizing BCl{submore » 3} plasma with the addition of argon is more efficient in removal of surface oxides from Al{sub x}Ga{sub 1−x}N than RIE alone. These experiments show that Al{sub x}Ga{sub 1−x}N etching is affected by the higher binding energy of AlN and the higher affinity of oxygen to aluminum compared to gallium, with oxides on a-plane AlGaN more difficult to etch as compared to oxides on c-plane AlGaN, specifically for high Al composition materials. The authors achieve reasonably high etch rate (∼350 nm/min) for high Al-content materials with a smooth surface morphology at a low DC bias of ∼−45 VDC.« less
  • Abstract not provided.