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Title: Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

Abstract

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.

Authors:
 [1];  [1];  [1];  [2];  [1];  [1];  [3]
  1. Georgia Inst. of Technology, Atlanta, GA (United States)
  2. Suniva Inc., Norcross GA (United States)
  3. Georgia Inst. of Technology, Atlanta, GA (United States); Suniva Inc., Norcross GA (United States)
Publication Date:
Research Org.:
Georgia Inst. of Technology, Atlanta, GA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1293939
DOE Contract Number:  
EE0006336
Resource Type:
Journal Article
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Volume: 24; Journal Issue: 6; Journal ID: ISSN 1062-7995
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; solar cells, tunnel oxide

Citation Formats

Tao, Yuguo, Upadhyaya, Vijaykumar, Chen, Chia-Wei, Payne, Adam, Chang, Elizabeth Lori, Upadhyaya, Ajay, and Rohatgi, Ajeet. Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells. United States: N. p., 2016. Web. doi:10.1002/pip.2739.
Tao, Yuguo, Upadhyaya, Vijaykumar, Chen, Chia-Wei, Payne, Adam, Chang, Elizabeth Lori, Upadhyaya, Ajay, & Rohatgi, Ajeet. Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells. United States. doi:10.1002/pip.2739.
Tao, Yuguo, Upadhyaya, Vijaykumar, Chen, Chia-Wei, Payne, Adam, Chang, Elizabeth Lori, Upadhyaya, Ajay, and Rohatgi, Ajeet. Thu . "Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells". United States. doi:10.1002/pip.2739.
@article{osti_1293939,
title = {Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells},
author = {Tao, Yuguo and Upadhyaya, Vijaykumar and Chen, Chia-Wei and Payne, Adam and Chang, Elizabeth Lori and Upadhyaya, Ajay and Rohatgi, Ajeet},
abstractNote = {This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.},
doi = {10.1002/pip.2739},
journal = {Progress in Photovoltaics},
issn = {1062-7995},
number = 6,
volume = 24,
place = {United States},
year = {2016},
month = {1}
}

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