An oxide-nitride-oxide capacitor dielectric film for silicon strip detectors
- Lawrence Berkeley Lab., CA (United States)
Silicon strip detectors with integrated coupling capacitors were fabricated on the same wafer with capacitor test structures an/d dielectric breakdown characteristics were evaluated. The standard silicon dioxide (oxide) dielectric was compared to a stacked film of silicon dioxide0silicon nitride-silicon dioxide (ONO). The thickness for the stacked film were chosen to give approximately the same value of capacitance per unit area as for the oxide. Since the dielectric constant of silicon nitride is approximately twice that of silicon dioxide, the ONO film can be made thicker than the corresponding oxide for the same capacitance. As a result the ONO film has a significantly higher breakdown voltage than that of an oxide film with equivalent capacitance.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 129161
- Report Number(s):
- CONF-941061-; ISSN 0018-9499; TRN: IM9550%%529
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 42, Issue 4Pt1; Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Norfolk, VA (United States), 30 Oct - 5 Nov 1994; Other Information: PBD: Aug 1995
- Country of Publication:
- United States
- Language:
- English
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