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Title: Lattice damage and compositional changes in Xe ion irradiated In xGa 1- xN( x = 0.32–1.0) single crystals

Abstract

Lattice disorder and compositional changes in In xGa 1-xN (x = 0.32, 0.47, 0.7, 0.8 and 1.0) films on GaN/Al2O 3 substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 x 10 13 cm -2, the relative level of lattice disorder in In xGa 1-xN increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich In xGa 1-xN (x = 0.32 and 0.47), significant volume swelling of up to ~25% accompanied with oxidation in In-rich In xGa 1-xN (x = 0.7, 0.8 and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In xGa 1-xN and GaN. The results from this study indicate an extreme susceptibility of the high In-content In xGa 1-xN to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Here, further studies of the irradiation behavior at elevated temperaturesmore » are warranted.« less

Authors:
 [1];  [2];  [2];  [1];  [1];  [1];  [2];  [1];  [2]
  1. Lanzhou Univ., Gansu (People's Republic of China)
  2. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1290405
Report Number(s):
PNNL-SA-116750
Journal ID: ISSN 0021-8979; 48707; 49138; AT2030110
Grant/Contract Number:
AC05-76RL01830
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 24; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Ion irradiation; high In-content InGaN; RBS/C; SIMS; Environmental Molecular Sciences Laboratory

Citation Formats

Zhang, Limin, Jiang, Weilin, Dissanayake, Amila C., Peng, Jinxin, Ai, Wensi, Zhang, Jiandong, Zhu, Zihua, Wang, Tieshan, and Shutthanandan, Vaithiyalingam. Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN(x = 0.32–1.0) single crystals. United States: N. p., 2016. Web. doi:10.1063/1.4954691.
Zhang, Limin, Jiang, Weilin, Dissanayake, Amila C., Peng, Jinxin, Ai, Wensi, Zhang, Jiandong, Zhu, Zihua, Wang, Tieshan, & Shutthanandan, Vaithiyalingam. Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN(x = 0.32–1.0) single crystals. United States. doi:10.1063/1.4954691.
Zhang, Limin, Jiang, Weilin, Dissanayake, Amila C., Peng, Jinxin, Ai, Wensi, Zhang, Jiandong, Zhu, Zihua, Wang, Tieshan, and Shutthanandan, Vaithiyalingam. Mon . "Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN(x = 0.32–1.0) single crystals". United States. doi:10.1063/1.4954691. https://www.osti.gov/servlets/purl/1290405.
@article{osti_1290405,
title = {Lattice damage and compositional changes in Xe ion irradiated InxGa1-xN(x = 0.32–1.0) single crystals},
author = {Zhang, Limin and Jiang, Weilin and Dissanayake, Amila C. and Peng, Jinxin and Ai, Wensi and Zhang, Jiandong and Zhu, Zihua and Wang, Tieshan and Shutthanandan, Vaithiyalingam},
abstractNote = {Lattice disorder and compositional changes in InxGa1-xN (x = 0.32, 0.47, 0.7, 0.8 and 1.0) films on GaN/Al2O3 substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 x 1013 cm-2, the relative level of lattice disorder in InxGa1-xN increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich InxGa1-xN (x = 0.32 and 0.47), significant volume swelling of up to ~25% accompanied with oxidation in In-rich InxGa1-xN (x = 0.7, 0.8 and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich InxGa1-xN and GaN. The results from this study indicate an extreme susceptibility of the high In-content InxGa1-xN to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Here, further studies of the irradiation behavior at elevated temperatures are warranted.},
doi = {10.1063/1.4954691},
journal = {Journal of Applied Physics},
number = 24,
volume = 119,
place = {United States},
year = {Mon Jun 27 00:00:00 EDT 2016},
month = {Mon Jun 27 00:00:00 EDT 2016}
}

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