skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for forming monolayer graphene-boron nitride heterostructures

Abstract

A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.

Inventors:
;
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1289690
Patent Number(s):
9,410,243
Application Number:
14/453,314
Assignee:
Brookhaven Science Associates, LLC (Upton, NY) BNL
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Aug 06
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Sutter, Peter Werner, and Sutter, Eli Anguelova. Method for forming monolayer graphene-boron nitride heterostructures. United States: N. p., 2016. Web.
Sutter, Peter Werner, & Sutter, Eli Anguelova. Method for forming monolayer graphene-boron nitride heterostructures. United States.
Sutter, Peter Werner, and Sutter, Eli Anguelova. Tue . "Method for forming monolayer graphene-boron nitride heterostructures". United States. doi:. https://www.osti.gov/servlets/purl/1289690.
@article{osti_1289690,
title = {Method for forming monolayer graphene-boron nitride heterostructures},
author = {Sutter, Peter Werner and Sutter, Eli Anguelova},
abstractNote = {A method for fabricating monolayer graphene-boron nitride heterostructures in a single atomically thin membrane that limits intermixing at boundaries between graphene and h-BN, so as to achieve atomically sharp interfaces between these materials. In one embodiment, the method comprises exposing a ruthenium substrate to ethylene, exposing the ruthenium substrate to oxygen after exposure to ethylene and exposing the ruthenium substrate to borazine after exposure to oxygen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 09 00:00:00 EDT 2016},
month = {Tue Aug 09 00:00:00 EDT 2016}
}

Patent:

Save / Share:

Works referenced in this record:

Atomic layers of hybridized boron nitride and graphene domains
journal, February 2010

  • Ci, Lijie; Song, Li; Jin, Chuanhong
  • Nature Materials, Vol. 9, Issue 5, p. 430-435
  • DOI: 10.1038/nmat2711

Epitaxial graphene on ruthenium
journal, April 2008

  • Sutter, Peter W.; Flege, Jan-Ingo; Sutter, Eli A.
  • Nature Materials, Vol. 7, Issue 5, p. 406-411
  • DOI: 10.1038/nmat2166

Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics
journal, January 2012

  • Lee, Kang Hyuck; Shin, Hyeon-Jin; Lee, Jinyeong
  • Nano Letters, Vol. 12, Issue 2, p. 714-718
  • DOI: 10.1021/nl203635v

Microscopy of Graphene Growth, Processing, and Properties
journal, April 2013

  • Sutter, Peter; Sutter, Eli
  • Advanced Functional Materials, Vol. 23, Issue 20, p. 2617-2634
  • DOI: 10.1002/adfm.201203426