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Title: High voltage and high current density vertical GaN power diodes

Abstract

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Lehigh Univ., Bethlehem, PA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1289617
Report Number(s):
SAND-2016-7478J
Journal ID: ISSN 0013-5194; 646341
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Electronics Letters
Additional Journal Information:
Journal Volume: 52; Journal Issue: 13; Journal ID: ISSN 0013-5194
Publisher:
Institution of Engineering and Technology (IET)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 30 DIRECT ENERGY CONVERSION

Citation Formats

Fischer, A. J., Dickerson, J. R., Armstrong, A. M., Moseley, M. W., Crawford, M. H., King, M. P., Allerman, A. A., Kaplar, R. J., van Heukelom, M. S., and Wierer, J. J. High voltage and high current density vertical GaN power diodes. United States: N. p., 2016. Web. doi:10.1049/el.2016.1156.
Fischer, A. J., Dickerson, J. R., Armstrong, A. M., Moseley, M. W., Crawford, M. H., King, M. P., Allerman, A. A., Kaplar, R. J., van Heukelom, M. S., & Wierer, J. J. High voltage and high current density vertical GaN power diodes. United States. https://doi.org/10.1049/el.2016.1156
Fischer, A. J., Dickerson, J. R., Armstrong, A. M., Moseley, M. W., Crawford, M. H., King, M. P., Allerman, A. A., Kaplar, R. J., van Heukelom, M. S., and Wierer, J. J. 2016. "High voltage and high current density vertical GaN power diodes". United States. https://doi.org/10.1049/el.2016.1156. https://www.osti.gov/servlets/purl/1289617.
@article{osti_1289617,
title = {High voltage and high current density vertical GaN power diodes},
author = {Fischer, A. J. and Dickerson, J. R. and Armstrong, A. M. and Moseley, M. W. and Crawford, M. H. and King, M. P. and Allerman, A. A. and Kaplar, R. J. and van Heukelom, M. S. and Wierer, J. J.},
abstractNote = {We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.},
doi = {10.1049/el.2016.1156},
url = {https://www.osti.gov/biblio/1289617}, journal = {Electronics Letters},
issn = {0013-5194},
number = 13,
volume = 52,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2016},
month = {Fri Jan 01 00:00:00 EST 2016}
}

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Cited by: 59 works
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Works referenced in this record:

An assessment of wide bandgap semiconductors for power devices
journal, May 2003


3.7 kV Vertical GaN PN Diodes
journal, February 2014


4-kV and 2.8-$\text{m}\Omega $ -cm 2 Vertical GaN p-n Diodes With Low Leakage Currents
journal, October 2015


400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V
journal, June 2014


High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
journal, December 2015


High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013


Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
journal, December 2015


Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
journal, November 2015


Vertical GaN Power Diodes With a Bilayer Edge Termination
journal, January 2016


Vertical Power p-n Diodes Based on Bulk GaN
journal, February 2015


Works referencing / citing this record:

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
journal, December 2017


Degradation Mechanisms of GaN‐Based Vertical Devices: A Review
journal, January 2020


Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy
journal, April 2020


Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
journal, March 2019


High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination
journal, July 2018


Activation of buried p-GaN in MOCVD-regrown vertical structures
journal, August 2018


Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy
journal, October 2019