High voltage and high current density vertical GaN power diodes
Abstract
We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.
- Authors:
-
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Lehigh Univ., Bethlehem, PA (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1289617
- Report Number(s):
- SAND-2016-7478J
Journal ID: ISSN 0013-5194; 646341
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Electronics Letters
- Additional Journal Information:
- Journal Volume: 52; Journal Issue: 13; Journal ID: ISSN 0013-5194
- Publisher:
- Institution of Engineering and Technology (IET)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; 30 DIRECT ENERGY CONVERSION
Citation Formats
Fischer, A. J., Dickerson, J. R., Armstrong, A. M., Moseley, M. W., Crawford, M. H., King, M. P., Allerman, A. A., Kaplar, R. J., van Heukelom, M. S., and Wierer, J. J. High voltage and high current density vertical GaN power diodes. United States: N. p., 2016.
Web. doi:10.1049/el.2016.1156.
Fischer, A. J., Dickerson, J. R., Armstrong, A. M., Moseley, M. W., Crawford, M. H., King, M. P., Allerman, A. A., Kaplar, R. J., van Heukelom, M. S., & Wierer, J. J. High voltage and high current density vertical GaN power diodes. United States. https://doi.org/10.1049/el.2016.1156
Fischer, A. J., Dickerson, J. R., Armstrong, A. M., Moseley, M. W., Crawford, M. H., King, M. P., Allerman, A. A., Kaplar, R. J., van Heukelom, M. S., and Wierer, J. J. 2016.
"High voltage and high current density vertical GaN power diodes". United States. https://doi.org/10.1049/el.2016.1156. https://www.osti.gov/servlets/purl/1289617.
@article{osti_1289617,
title = {High voltage and high current density vertical GaN power diodes},
author = {Fischer, A. J. and Dickerson, J. R. and Armstrong, A. M. and Moseley, M. W. and Crawford, M. H. and King, M. P. and Allerman, A. A. and Kaplar, R. J. and van Heukelom, M. S. and Wierer, J. J.},
abstractNote = {We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.},
doi = {10.1049/el.2016.1156},
url = {https://www.osti.gov/biblio/1289617},
journal = {Electronics Letters},
issn = {0013-5194},
number = 13,
volume = 52,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 2016},
month = {Fri Jan 01 00:00:00 EST 2016}
}
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Works referencing / citing this record:
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
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Degradation Mechanisms of GaN‐Based Vertical Devices: A Review
journal, January 2020
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The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates
journal, December 2019
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- physica status solidi (a), Vol. 217, Issue 7
Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy
journal, April 2020
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Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
journal, March 2019
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High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination
journal, July 2018
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Activation of buried p-GaN in MOCVD-regrown vertical structures
journal, August 2018
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Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy
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