skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Low temperature deep reactive ion etching :


Abstract not provided.

; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Proposed for presentation at the NMAVS Conference held May 24, 2011 in Albuquerque, NM.
Country of Publication:
United States

Citation Formats

Fishgrab, Kira L, Young, Travis Ryan, Wiwi, Michael, Shul, Randy John, and Clevenger, Jascinda. Low temperature deep reactive ion etching :. United States: N. p., 2011. Web.
Fishgrab, Kira L, Young, Travis Ryan, Wiwi, Michael, Shul, Randy John, & Clevenger, Jascinda. Low temperature deep reactive ion etching :. United States.
Fishgrab, Kira L, Young, Travis Ryan, Wiwi, Michael, Shul, Randy John, and Clevenger, Jascinda. 2011. "Low temperature deep reactive ion etching :". United States. doi:.
title = {Low temperature deep reactive ion etching :},
author = {Fishgrab, Kira L and Young, Travis Ryan and Wiwi, Michael and Shul, Randy John and Clevenger, Jascinda},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2011,
month = 5

Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • Deep reactive ion etching (DRIE) of silicon was utilized to fabricate dielectric membrane-based devices such as microhotplates, valves and flexural plate wave (FPW) devices. Through-wafer DRIE is characterized by fast etch rates ({approximately} 3 {micro}m/min), crystal orientation independence, vertical sidewall profiles and CMOS compatibility. Low-stress silicon nitride, a popular membrane material, has an appreciable DRIE etch rate. To overcome this limitations DRIE can be accompanied by a brief wet chemical etch. This approach has been demonstrated using KOH or HF/Nitric/Acetic etchants, both of which have significantly lower etch rates on silicon nitride than does DRIE. The DRIE etch properties ofmore » composite membranes consisting of silicon dioxide and silicon nitride layers are also under evaluation due to the higher DRIE selectivity to silicon dioxide.« less
  • At present, the fabrication of patterns with deep submicron and nanometer dimensions has attracted strong attention for the study of nanoscale devices. A method for fabrication of fine patterns by conventional technologies such as optical lithography, trilayer resist, magnetron reactive ion etching (MRIE), and plasma enhanced chemical vapor deposition (PECVD) is described. Using the sidewall process for fine pattern transfer and magnetron reactive ion etching, deep submicron and nanometer patterns with high aspect ratio have been prepared. 3 refs., 6 figs.
  • A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripplesmore » to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.« less
  • Fluorocarbon films have low surface energy and can be used as antistiction coating for microelectromechanical systems. By using the passivation process in a deep reactive ion etcher, the fluorocarbon films can be deposited and integrated with other processes in the clean room. The properties such as wettability, surface energies, and thermal stability, have been investigated in detail. It has been found that the fluorocarbon films deposited have a static water contact angle of 109 deg. and a surface energy around 14.5 mJ/m{sup 2}, whereas as-received and as-deposited single silicon, poly silicon, and silicon nitride have a much lower water contactmore » angle and a higher surface energy. The fluorocarbon films keep their good hydrophobicity up to 300 deg. C, and the degradation temperature depends on the thickness of the fluorocarbon films. Decomposition happens at lower temperatures (100-300 deg. C) even though the decomposition rate is quite slow without affecting the contact angle. The decomposition mechanism at low temperatures (less than 300 deg. C) might be different from that at high temperatures. It has been shown that the fluorocarbon film deposited by a deep reactive ion etcher tool provides very high hydrophobicity, low surface energy, good thermal stability, and antiadhesion behavior for use in nanoimprinting lithography.« less
  • Silicon nanograss and nanostructures are realized using a modified deep reactive ion etching technique on both plane and vertical surfaces of a silicon substrate. The etching process is based on a sequential passivation and etching cycle, and it can be adjusted to achieve grassless high aspect ratio features as well as grass-full surfaces. The incorporation of nanostructures onto vertically placed parallel fingers of an interdigital capacitive accelerometer increases the total capacitance from 0.45 to 30 pF. Vertical structures with features below 100 nm have been realized.