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Title: Superconducting energy scales and anomalous dissipative conductivity in thin films of molybdenum nitride

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
OSTI Identifier:
1287762
Grant/Contract Number:
FWP 50335
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 94; Journal Issue: 6; Related Information: CHORUS Timestamp: 2016-08-09 18:10:14; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Simmendinger, Julian, Pracht, Uwe S., Daschke, Lena, Proslier, Thomas, Klug, Jeffrey A., Dressel, Martin, and Scheffler, Marc. Superconducting energy scales and anomalous dissipative conductivity in thin films of molybdenum nitride. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.94.064506.
Simmendinger, Julian, Pracht, Uwe S., Daschke, Lena, Proslier, Thomas, Klug, Jeffrey A., Dressel, Martin, & Scheffler, Marc. Superconducting energy scales and anomalous dissipative conductivity in thin films of molybdenum nitride. United States. doi:10.1103/PhysRevB.94.064506.
Simmendinger, Julian, Pracht, Uwe S., Daschke, Lena, Proslier, Thomas, Klug, Jeffrey A., Dressel, Martin, and Scheffler, Marc. 2016. "Superconducting energy scales and anomalous dissipative conductivity in thin films of molybdenum nitride". United States. doi:10.1103/PhysRevB.94.064506.
@article{osti_1287762,
title = {Superconducting energy scales and anomalous dissipative conductivity in thin films of molybdenum nitride},
author = {Simmendinger, Julian and Pracht, Uwe S. and Daschke, Lena and Proslier, Thomas and Klug, Jeffrey A. and Dressel, Martin and Scheffler, Marc},
abstractNote = {},
doi = {10.1103/PhysRevB.94.064506},
journal = {Physical Review B},
number = 6,
volume = 94,
place = {United States},
year = 2016,
month = 8
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.94.064506

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  • We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89K >= T-c >= 2.78 K. Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm(-1) (0.1 to 1.1 THz). The superconducting energy scales, i.e., the critical temperature T-c, the pairing energy Delta, and the superfluid stiffness J, and the superfluid density n(s) can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot bemore » explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K.« less
  • Molybdenum nitride thin films have been deposited on aluminum nitride buffered glass substrates by reactive DC sputtering. GIXRD measurements indicate formation of nano-crystalline molybdenum nitride thin films. The transition temperature of MoN thin film is 7.52 K. The transition width is less than 0.1 K. The upper critical field Bc{sub 2}(0), calculated using GLAG theory is 12.52 T. The transition width for 400 µA current increased initially upto 3 T and then decreased, while that for 100 µA current transition width did not decrease.
  • The authors have found the local epitaxial growth of aluminum nitride (AlN) and molybdenum (Mo) films in fiber texture, although the interface between the AlN and Mo films has different crystal symmetries. The local heteroepitaxial relationship is (0001)AlN[2110](parallel sign)(110)Mo[111](parallel sign)(0001)AlN[2110]. The AlN films changes from nonequiaxed microstructures to equiaxed columnar structures. The authors think that the AlN interlayer is effective in decreasing the crystallization energy of the Mo electrode due to the coherent heteroepitaxial nucleation. It is interesting that the local heteroepitaxial relationship does not satisfy the criteria for heteroepitaxial growth.