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Title: Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films

Abstract

Here, scanning probe bias techniques have been used as a method to locally dope thin epitaxial films of La 2CuO 4 (LCO) fabricated by pulsed laser deposition. The local electrochemical oxidation of LCO very efficiently introduces interstitial oxygen defects in the thin film. Details on the influence of the tip voltage bias and environmental conditions on the surface morphology have been investigated. The results show that a local uptake of oxygen occurs in the oxidized films.

Authors:
 [1];  [2];  [3];  [3];  [3];  [3];  [3];  [1];  [3];  [1];  [1];  [1]
  1. Univ. of Roma 'Tor Vergata', Rome (Italy)
  2. Univ. of Roma 'Tor Vergata', Rome (Italy); Univ. degli Studi Niccolo Cusano, Rome (Italy)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1286921
DOE Contract Number:
AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nanotechnology; Journal Volume: 26; Journal Issue: 32
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lavini, Francesco, Yang, Nan, Vasudevan, Rama K., Strelcov, Evgheni, Jesse, Stephen, Okatan, Mahmut Baris, Kravchenko, Ivan I., Di Castro, Daniele, Kalinin, Sergei V., Balestrino, Giuseppe, Foglietti, Vittorio, and Aruta, Carmela. Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films. United States: N. p., 2015. Web. doi:10.1088/0957-4484/26/32/325302.
Lavini, Francesco, Yang, Nan, Vasudevan, Rama K., Strelcov, Evgheni, Jesse, Stephen, Okatan, Mahmut Baris, Kravchenko, Ivan I., Di Castro, Daniele, Kalinin, Sergei V., Balestrino, Giuseppe, Foglietti, Vittorio, & Aruta, Carmela. Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films. United States. doi:10.1088/0957-4484/26/32/325302.
Lavini, Francesco, Yang, Nan, Vasudevan, Rama K., Strelcov, Evgheni, Jesse, Stephen, Okatan, Mahmut Baris, Kravchenko, Ivan I., Di Castro, Daniele, Kalinin, Sergei V., Balestrino, Giuseppe, Foglietti, Vittorio, and Aruta, Carmela. Thu . "Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films". United States. doi:10.1088/0957-4484/26/32/325302.
@article{osti_1286921,
title = {Bias assisted scanning probe microscopy direct write lithography enables local oxygen enrichment of lanthanum cuprates thin films},
author = {Lavini, Francesco and Yang, Nan and Vasudevan, Rama K. and Strelcov, Evgheni and Jesse, Stephen and Okatan, Mahmut Baris and Kravchenko, Ivan I. and Di Castro, Daniele and Kalinin, Sergei V. and Balestrino, Giuseppe and Foglietti, Vittorio and Aruta, Carmela},
abstractNote = {Here, scanning probe bias techniques have been used as a method to locally dope thin epitaxial films of La2CuO4 (LCO) fabricated by pulsed laser deposition. The local electrochemical oxidation of LCO very efficiently introduces interstitial oxygen defects in the thin film. Details on the influence of the tip voltage bias and environmental conditions on the surface morphology have been investigated. The results show that a local uptake of oxygen occurs in the oxidized films.},
doi = {10.1088/0957-4484/26/32/325302},
journal = {Nanotechnology},
number = 32,
volume = 26,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}