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Title: Air-stable solution-processed n-channel organic thin film transistors with polymerenhanced morphology

Abstract

N,N 0-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2) is an n-type semiconductor exhibiting high electron mobility and excellent air stability. However, the reported electron mobility based on spin-coated PDIF-CN 2 film is much lower than the value of PDIF-CN 2 single crystals made from vapor phase deposition, indicating significant room for mobility enhancement. In this study, various insulating polymers, including poly(vinyl alcohol), poly(methyl methacrylate) (PMMA), and poly(alpha-methylstyrene) (PaMS), are pre-coated on silicon substrate aiming to enhance the morphology of the PDIF-CN 2 thin film, thereby improving the charge transport and air stability. Atomic force microscopy images reveal that with the pre-deposition of PaMS or PMMA polymers, the morphology of the PDIF-CN 2 polycrystalline films is optimized in semiconducting crystal connectivity, domain size, and surface roughness, which leads to significant improvement of organic thin-film transistor (OTFT) performance. Particularly, an electron mobility of up to 0.55 cm 2/V s has been achieved from OTFTs based on the PDIF-CN 2 film with the pre-deposition of PaMS polymer.

Authors:
 [1];  [1];  [1];  [2];  [1]
  1. Univ. of Alabama, Tuscaloosa, AL (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1286903
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

He, Zhengran, Shaik, Shoieb, Bi, Sheng, Chen, Jihua, and Li, Dawen. Air-stable solution-processed n-channel organic thin film transistors with polymerenhanced morphology. United States: N. p., 2015. Web. doi:10.1063/1.4919677.
He, Zhengran, Shaik, Shoieb, Bi, Sheng, Chen, Jihua, & Li, Dawen. Air-stable solution-processed n-channel organic thin film transistors with polymerenhanced morphology. United States. doi:10.1063/1.4919677.
He, Zhengran, Shaik, Shoieb, Bi, Sheng, Chen, Jihua, and Li, Dawen. Mon . "Air-stable solution-processed n-channel organic thin film transistors with polymerenhanced morphology". United States. doi:10.1063/1.4919677. https://www.osti.gov/servlets/purl/1286903.
@article{osti_1286903,
title = {Air-stable solution-processed n-channel organic thin film transistors with polymerenhanced morphology},
author = {He, Zhengran and Shaik, Shoieb and Bi, Sheng and Chen, Jihua and Li, Dawen},
abstractNote = {N,N0-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN2) is an n-type semiconductor exhibiting high electron mobility and excellent air stability. However, the reported electron mobility based on spin-coated PDIF-CN2 film is much lower than the value of PDIF-CN2 single crystals made from vapor phase deposition, indicating significant room for mobility enhancement. In this study, various insulating polymers, including poly(vinyl alcohol), poly(methyl methacrylate) (PMMA), and poly(alpha-methylstyrene) (PaMS), are pre-coated on silicon substrate aiming to enhance the morphology of the PDIF-CN2 thin film, thereby improving the charge transport and air stability. Atomic force microscopy images reveal that with the pre-deposition of PaMS or PMMA polymers, the morphology of the PDIF-CN2 polycrystalline films is optimized in semiconducting crystal connectivity, domain size, and surface roughness, which leads to significant improvement of organic thin-film transistor (OTFT) performance. Particularly, an electron mobility of up to 0.55 cm2/V s has been achieved from OTFTs based on the PDIF-CN2 film with the pre-deposition of PaMS polymer.},
doi = {10.1063/1.4919677},
journal = {Applied Physics Letters},
number = 18,
volume = 106,
place = {United States},
year = {Mon May 04 00:00:00 EDT 2015},
month = {Mon May 04 00:00:00 EDT 2015}
}

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Cited by: 5 works
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Works referenced in this record:

Large modulation of carrier transport by grain-boundary molecular packing and microstructure in organic thin films
journal, November 2009

  • Rivnay, Jonathan; Jimison, Leslie H.; Northrup, John E.
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High-Performance Polymer-Small Molecule Blend Organic Transistors
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