Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials]

Zalden, Peter; Shu, Michael J.; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi -Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W.; Wong, H. -S. Philip; Sher, Meng -Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M.

doi:10.1103/PhysRevLett.117.067601

Title: Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials]

Journal Article · Fri Aug 05 00:00:00 EDT 2016 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.117.067601· OSTI ID:1341736

Zalden, Peter ^[1]; Shu, Michael J. ^[2]; Chen, Frank ^[2]; Wu, Xiaoxi ^[3]; Zhu, Yi ^[4]; Wen, Haidan ^[4]; Johnston, Scott ^[5]; Shen, Zhi -Xun ^[5]; Landreman, Patrick ^[5]; Brongersma, Mark ^[5]; Fong, Scott W. ^[5]; Wong, H. -S. Philip ^[5]; Sher, Meng -Ju ^[5]; Jost, Peter ^[6]; Kaes, Matthias ^[6]; Salinga, Martin ^[6]; von Hoegen, Alexander ^[6]; Wuttig, Matthias ^[6]; Lindenberg, Aaron M. ^[2]

SLAC National Accelerator Lab., Menlo Park, CA (United States); European XFEL, Schenefeld (Germany)
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Stanford Univ., Stanford, CA (United States)
RWTH Aachen Univ., Aachen (Germany)

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag₄In₃Sb₆₇Te₂₆. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1341736

Alternate ID(s):: OSTI ID: 1283426

Journal Information:: Physical Review Letters, Vol. 117, Issue 6; ISSN 0031-9007

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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