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Title: Chemical-free n-type and p-type multilayer-graphene transistors

Authors:
 [1];  [2]
  1. Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402, USA
  2. Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973, USA, Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794, USA, Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1283420
Grant/Contract Number:
SC0012704
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 5; Related Information: CHORUS Timestamp: 2018-03-09 11:38:24; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Dissanayake, D. M. N. M., and Eisaman, M. D.. Chemical-free n-type and p-type multilayer-graphene transistors. United States: N. p., 2016. Web. doi:10.1063/1.4960530.
Dissanayake, D. M. N. M., & Eisaman, M. D.. Chemical-free n-type and p-type multilayer-graphene transistors. United States. doi:10.1063/1.4960530.
Dissanayake, D. M. N. M., and Eisaman, M. D.. Fri . "Chemical-free n-type and p-type multilayer-graphene transistors". United States. doi:10.1063/1.4960530.
@article{osti_1283420,
title = {Chemical-free n-type and p-type multilayer-graphene transistors},
author = {Dissanayake, D. M. N. M. and Eisaman, M. D.},
abstractNote = {},
doi = {10.1063/1.4960530},
journal = {Applied Physics Letters},
number = 5,
volume = 109,
place = {United States},
year = {Fri Aug 05 00:00:00 EDT 2016},
month = {Fri Aug 05 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4960530

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