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Title: Chemical-free n-type and p-type multilayer-graphene transistors

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Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 5; Related Information: CHORUS Timestamp: 2016-12-26 03:20:15; Journal ID: ISSN 0003-6951
American Institute of Physics
Country of Publication:
United States

Citation Formats

Dissanayake, D. M. N. M., and Eisaman, M. D.. Chemical-free n-type and p-type multilayer-graphene transistors. United States: N. p., 2016. Web. doi:10.1063/1.4960530.
Dissanayake, D. M. N. M., & Eisaman, M. D.. Chemical-free n-type and p-type multilayer-graphene transistors. United States. doi:10.1063/1.4960530.
Dissanayake, D. M. N. M., and Eisaman, M. D.. 2016. "Chemical-free n-type and p-type multilayer-graphene transistors". United States. doi:10.1063/1.4960530.
title = {Chemical-free n-type and p-type multilayer-graphene transistors},
author = {Dissanayake, D. M. N. M. and Eisaman, M. D.},
abstractNote = {},
doi = {10.1063/1.4960530},
journal = {Applied Physics Letters},
number = 5,
volume = 109,
place = {United States},
year = 2016,
month = 8

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4960530

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  • A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping.more » When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.« less
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