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Title: Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study

Authors:
 [1]; ORCiD logo [1];  [2];  [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1]
  1. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA
  2. Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1282418
Grant/Contract Number:  
FG02-06ER46275
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 120 Journal Issue: 5; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Ambwani, P., Xu, P., Haugstad, G., Jeong, J. S., Deng, R., Mkhoyan, K. A., Jalan, B., and Leighton, C.. Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study. United States: N. p., 2016. Web. doi:10.1063/1.4960343.
Ambwani, P., Xu, P., Haugstad, G., Jeong, J. S., Deng, R., Mkhoyan, K. A., Jalan, B., & Leighton, C.. Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study. United States. doi:10.1063/1.4960343.
Ambwani, P., Xu, P., Haugstad, G., Jeong, J. S., Deng, R., Mkhoyan, K. A., Jalan, B., and Leighton, C.. Thu . "Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study". United States. doi:10.1063/1.4960343.
@article{osti_1282418,
title = {Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study},
author = {Ambwani, P. and Xu, P. and Haugstad, G. and Jeong, J. S. and Deng, R. and Mkhoyan, K. A. and Jalan, B. and Leighton, C.},
abstractNote = {},
doi = {10.1063/1.4960343},
journal = {Journal of Applied Physics},
number = 5,
volume = 120,
place = {United States},
year = {Thu Aug 04 00:00:00 EDT 2016},
month = {Thu Aug 04 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4960343

Citation Metrics:
Cited by: 2 works
Citation information provided by
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Works referenced in this record:

Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V-1 s-1
journal, April 2010

  • Son, Junwoo; Moetakef, Pouya; Jalan, Bharat
  • Nature Materials, Vol. 9, Issue 6, p. 482-484
  • DOI: 10.1038/nmat2750

Atomic Control of the SrTiO3 Crystal Surface
journal, December 1994


Two-dimensional normal-state quantum oscillations in a superconducting heterostructure
journal, November 2009

  • Kozuka, Y.; Kim, M.; Bell, C.
  • Nature, Vol. 462, Issue 7272, p. 487-490
  • DOI: 10.1038/nature08566