Method of fabricating a back-contact solar cell and device thereof
Patent
·
OSTI ID:1279969
Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.
- Research Organization:
- SunPower Corporation, San Jose, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC36-07GO17043
- Assignee:
- SunPower Corporation (San Jose, CA)
- Patent Number(s):
- 9,406,821
- Application Number:
- 14/314,938
- OSTI ID:
- 1279969
- Country of Publication:
- United States
- Language:
- English
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