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Title: Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH 3 molecular beam epitaxy

Abstract

Unipolar-light emitting diode like structures were grown by NH 3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In 0.14Ga 0.86N and In 0.19Ga 0.81N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. Furthermore, a drift diffusion Schrodinger Poisson method accounting for two dimensional indium fluctuations (both in the growth directionmore » and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.« less

Authors:
 [1];  [2];  [1];  [3]
  1. Univ. of California, Santa Barbara, CA (United States)
  2. National Taiwan Univ., Taipei (Taiwan)
  3. Univ. of California, Santa Barbara, CA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE
OSTI Identifier:
1279421
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 18; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; quantum wells; indium; quantum fluctuations; quantum transport; light emitting diodes

Citation Formats

Browne, David A., Wu, Yuh -Renn, Speck, James S., and Mazumder, Baishakhi. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy. United States: N. p., 2015. Web. doi:10.1063/1.4919750.
Browne, David A., Wu, Yuh -Renn, Speck, James S., & Mazumder, Baishakhi. Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy. United States. doi:10.1063/1.4919750.
Browne, David A., Wu, Yuh -Renn, Speck, James S., and Mazumder, Baishakhi. Fri . "Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy". United States. doi:10.1063/1.4919750. https://www.osti.gov/servlets/purl/1279421.
@article{osti_1279421,
title = {Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy},
author = {Browne, David A. and Wu, Yuh -Renn and Speck, James S. and Mazumder, Baishakhi},
abstractNote = {Unipolar-light emitting diode like structures were grown by NH3 molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In0.14Ga0.86N and In0.19Ga0.81N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. Furthermore, a drift diffusion Schrodinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.},
doi = {10.1063/1.4919750},
journal = {Journal of Applied Physics},
number = 18,
volume = 117,
place = {United States},
year = {Fri May 08 00:00:00 EDT 2015},
month = {Fri May 08 00:00:00 EDT 2015}
}

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Cited by: 17 works
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Works referenced in this record:

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
journal, January 1996

  • Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin-ichi
  • Japanese Journal of Applied Physics, Vol. 35, Issue Part 2, No. 1B, p. L74-L76
  • DOI: 10.1143/JJAP.35.L74

Spontaneous polarization and piezoelectric constants of III-V nitrides
journal, October 1997

  • Bernardini, Fabio; Fiorentini, Vincenzo; Vanderbilt, David
  • Physical Review B, Vol. 56, Issue 16, p. R10024-R10027
  • DOI: 10.1103/PhysRevB.56.R10024