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Title: Flexible neural interfaces with integrated stiffening shank

Abstract

A neural interface includes a first dielectric material having at least one first opening for a first electrical conducting material, a first electrical conducting material in the first opening, and at least one first interconnection trace electrical conducting material connected to the first electrical conducting material. A stiffening shank material is located adjacent the first dielectric material, the first electrical conducting material, and the first interconnection trace electrical conducting material.

Inventors:
; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1273463
Patent Number(s):
9,399,128
Application Number:
14/210,194
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA) LLNL
DOE Contract Number:
AC52-07NA27344
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Mar 13
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE

Citation Formats

Tooker, Angela C., Felix, Sarah H., Pannu, Satinderpall S., Shah, Kedar G., Sheth, Heeral, and Tolosa, Vanessa. Flexible neural interfaces with integrated stiffening shank. United States: N. p., 2016. Web.
Tooker, Angela C., Felix, Sarah H., Pannu, Satinderpall S., Shah, Kedar G., Sheth, Heeral, & Tolosa, Vanessa. Flexible neural interfaces with integrated stiffening shank. United States.
Tooker, Angela C., Felix, Sarah H., Pannu, Satinderpall S., Shah, Kedar G., Sheth, Heeral, and Tolosa, Vanessa. 2016. "Flexible neural interfaces with integrated stiffening shank". United States. doi:. https://www.osti.gov/servlets/purl/1273463.
@article{osti_1273463,
title = {Flexible neural interfaces with integrated stiffening shank},
author = {Tooker, Angela C. and Felix, Sarah H. and Pannu, Satinderpall S. and Shah, Kedar G. and Sheth, Heeral and Tolosa, Vanessa},
abstractNote = {A neural interface includes a first dielectric material having at least one first opening for a first electrical conducting material, a first electrical conducting material in the first opening, and at least one first interconnection trace electrical conducting material connected to the first electrical conducting material. A stiffening shank material is located adjacent the first dielectric material, the first electrical conducting material, and the first interconnection trace electrical conducting material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 7
}

Patent:

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  • A neural interface includes a first dielectric material having at least one first opening for a first electrical conducting material, a first electrical conducting material in the first opening, and at least one first interconnection trace electrical conducting material connected to the first electrical conducting material. A stiffening shank material is located adjacent the first dielectric material, the first electrical conducting material, and the first interconnection trace electrical conducting material.
  • A flexible device insertion tool including an elongated stiffener with one or more suction ports, and a vacuum connector for interfacing the stiffener to a vacuum source, for attaching the flexible device such as a flexible neural probe to the stiffener during insertion by a suction force exerted through the suction ports to, and to release the flexible device by removing the suction force.
  • The present invention is related to methods of fabricating neural interfaces using 3D projection micro-stereolithography.
  • Customizable neural network in which one or more resistors form each synapse is disclosed. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength. 5 figs.
  • Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.