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Title: Method for producing highly conformal transparent conducting oxides

Abstract

A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.

Inventors:
;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1273245
Patent Number(s):
9,401,231
Application Number:
13/249,864
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL) ANL
DOE Contract Number:
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Sep 30
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Elam, Jeffrey W., and Mane, Anil U. Method for producing highly conformal transparent conducting oxides. United States: N. p., 2016. Web.
Elam, Jeffrey W., & Mane, Anil U. Method for producing highly conformal transparent conducting oxides. United States.
Elam, Jeffrey W., and Mane, Anil U. 2016. "Method for producing highly conformal transparent conducting oxides". United States. doi:. https://www.osti.gov/servlets/purl/1273245.
@article{osti_1273245,
title = {Method for producing highly conformal transparent conducting oxides},
author = {Elam, Jeffrey W. and Mane, Anil U.},
abstractNote = {A method for forming a transparent conducting oxide product layer. The method includes use of precursors, such as tetrakis-(dimethylamino) tin and trimethyl indium, and selected use of dopants, such as SnO and ZnO for obtaining desired optical, electrical and structural properties for a highly conformal layer coating on a substrate. Ozone was also input as a reactive gas which enabled rapid production of the desired product layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 7
}

Patent:

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  • A method for producing transparent p-type conducting oxide films without co-doping plasma enhancement or high temperature comprising: a) introducing a dialkyl metal at ambient temperature and a saturated pressure in a carrier gas into a low pressure deposition chamber, and b) introducing NO alone or with an oxidizer into the chamber under an environment sufficient to produce a metal-rich condition to enable NO decomposition and atomic nitrogen incorporation into the formed transparent metal conducting oxide.
  • A facile, low temperature and low pressure method for the preparation of a wide range of phase pure ABO.sub.2 compositions.
  • Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
  • Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber. The method may also comprise depositing a metal oxide on the target in the process chamber to form a thin film having enhanced optical properties without substantially decreasing electrical quality.
  • A facile, low temperature and low pressure method for the preparation of a wide range of phase pure ABO.sub.2 compositions.