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Title: High temperature Hall measurement setup for thin film characterization

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1]
  1. Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut 06269, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1272653
Grant/Contract Number:
FG02-10ER46774; SC0005038
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 87; Journal Issue: 7; Related Information: CHORUS Timestamp: 2017-09-11 20:47:46; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Adnane, L., Gokirmak, A., and Silva, H. High temperature Hall measurement setup for thin film characterization. United States: N. p., 2016. Web. doi:10.1063/1.4959222.
Adnane, L., Gokirmak, A., & Silva, H. High temperature Hall measurement setup for thin film characterization. United States. doi:10.1063/1.4959222.
Adnane, L., Gokirmak, A., and Silva, H. 2016. "High temperature Hall measurement setup for thin film characterization". United States. doi:10.1063/1.4959222.
@article{osti_1272653,
title = {High temperature Hall measurement setup for thin film characterization},
author = {Adnane, L. and Gokirmak, A. and Silva, H.},
abstractNote = {},
doi = {10.1063/1.4959222},
journal = {Review of Scientific Instruments},
number = 7,
volume = 87,
place = {United States},
year = 2016,
month = 7
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4959222

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  • Hall measurement using the van der Pauw technique is a common characterization approach that does not require patterning of contacts. Measurements of the Hall voltage and electrical resistivity lead to the product of carrier mobility and carrier concentration (Hall coefficient) which can be decoupled through transport models. Based on the van der Paw method, we have developed an automated setup for Hall measurements from room temperature to ∼500 °C of semiconducting thin films of a wide resistivity range. The resistivity of the film and Hall coefficient is obtained from multiple current-voltage (I-V) measurements performed using a semiconductor parameter analyzer under appliedmore » constant “up,” zero, and “down” magnetic field generated with two neodymium permanent magnets. The use of slopes obtained from multiple I-Vs for the three magnetic field conditions offer improved accuracy. Samples are preferred in square shape geometry and can range from 2 mm to 25 mm side length. Example measurements of single-crystal silicon with known doping concentration show the accuracy and reliability of the measurement.« less
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  • Most thin films produced by a wide variety of methods, either physical or chemical (PVD, CVD, sputtering, etc.) for temperature sensor applications, can be used only in very narrow ranges of temperatures, where their components are not subjected to differential thermal expansions, recrystallizations, and grain size modifications. This paper reports the production and characterization of thin films of platinum and titanium in ceramic substrates by one of the physical vapor deposition techniques, the e-gun evaporation. The choice of materials and the determination of film thickness, density, electrical resistivity, surface roughness, and structural characterization (X-ray, SEM, and AES) are studied. Specialmore » emphasis is given to the thermal and electrical behavior of these films between room temperature and 1000 C.« less
  • In this paper, a W-Ta thin-film thermocouple has been integrated on a diamond anvil cell by thin-film deposition and photolithography methods. The thermocouple was calibrated and its thermal electromotive force was studied under high pressure. The results indicate that the thermal electromotive force of the thermocouple exhibits a linear relationship with temperature and is not associated with pressure. The resistivity measurement of ZnS powders under high pressure at different temperatures shows that the phase transition pressure decreases as the temperature increases.
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