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Title: In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating

Abstract

Focused helium and neon ion (He(+)/Ne(+) ) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+) /Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. In conclusion, these results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.

Authors:
 [1];  [1];  [2];  [2];  [3];  [3];  [2]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Intel Corporation, Santa Clara, CA (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1271869
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Small
Additional Journal Information:
Journal Volume: 12; Journal Issue: 13; Journal ID: ISSN 1613-6810
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Stanford, Michael G., Lewis, Brett B., Iberi, Vighter O., Fowlkes, Jason Davidson, Tan, Shida, Livengood, Rick, and Rack, Philip D. In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating. United States: N. p., 2016. Web. doi:10.1002/smll.201503680.
Stanford, Michael G., Lewis, Brett B., Iberi, Vighter O., Fowlkes, Jason Davidson, Tan, Shida, Livengood, Rick, & Rack, Philip D. In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating. United States. doi:10.1002/smll.201503680.
Stanford, Michael G., Lewis, Brett B., Iberi, Vighter O., Fowlkes, Jason Davidson, Tan, Shida, Livengood, Rick, and Rack, Philip D. Tue . "In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating". United States. doi:10.1002/smll.201503680. https://www.osti.gov/servlets/purl/1271869.
@article{osti_1271869,
title = {In situ mitigation of subsurface and peripheral focused ion beam damage via simultaneous pulsed laser heating},
author = {Stanford, Michael G. and Lewis, Brett B. and Iberi, Vighter O. and Fowlkes, Jason Davidson and Tan, Shida and Livengood, Rick and Rack, Philip D.},
abstractNote = {Focused helium and neon ion (He(+)/Ne(+) ) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+) /Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. In conclusion, these results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.},
doi = {10.1002/smll.201503680},
journal = {Small},
issn = {1613-6810},
number = 13,
volume = 12,
place = {United States},
year = {2016},
month = {2}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 8 works
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    Works referencing / citing this record:

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