skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Equivalent-Circuit Model for the TSM Resonator with a Viscoelastic Layer

Abstract

This paper describes a new equivalent-circuit model for the thickness shear mode resonator with a surface viscoelastic layer operating near film resonance. The electrical impedance of the film is represented by a simple three-element parallel circuit containing a resistor, a capacitor, and an inductor. These elements describe the film's viscous power dissipation, elastic energy storage, and kinetic energy storage, respectively. Resonator response comparisons between this lumped-element model and the general transmission-line model show good agreement over a range of film phase conditions and not just near film resonance.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
12716
Report Number(s):
SAND99-0725C
TRN: AH200120%%404
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Eurosensors XIII, The Hague (NL), 09/12/1999--09/15/1999; Other Information: PBD: 16 Sep 1999
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; IMPEDANCE; KINETIC ENERGY; RESONATORS; SHEAR; THICKNESS; MATHEMATICAL MODELS; ELASTICITY; VISCOSITY; RESPONSE FUNCTIONS; THICKNESS SHEAR MODE RESONATOR; QCM; VISCOELEASTICITY: EQUIVALENT-CIRCUIT MODEL

Citation Formats

BANDEY, HELEN L, CERNOSEK, RICHARD W, HILLMAN, A R, and MARTIN, STEPHEN J. Equivalent-Circuit Model for the TSM Resonator with a Viscoelastic Layer. United States: N. p., 1999. Web.
BANDEY, HELEN L, CERNOSEK, RICHARD W, HILLMAN, A R, & MARTIN, STEPHEN J. Equivalent-Circuit Model for the TSM Resonator with a Viscoelastic Layer. United States.
BANDEY, HELEN L, CERNOSEK, RICHARD W, HILLMAN, A R, and MARTIN, STEPHEN J. 1999. "Equivalent-Circuit Model for the TSM Resonator with a Viscoelastic Layer". United States. https://www.osti.gov/servlets/purl/12716.
@article{osti_12716,
title = {Equivalent-Circuit Model for the TSM Resonator with a Viscoelastic Layer},
author = {BANDEY, HELEN L and CERNOSEK, RICHARD W and HILLMAN, A R and MARTIN, STEPHEN J},
abstractNote = {This paper describes a new equivalent-circuit model for the thickness shear mode resonator with a surface viscoelastic layer operating near film resonance. The electrical impedance of the film is represented by a simple three-element parallel circuit containing a resistor, a capacitor, and an inductor. These elements describe the film's viscous power dissipation, elastic energy storage, and kinetic energy storage, respectively. Resonator response comparisons between this lumped-element model and the general transmission-line model show good agreement over a range of film phase conditions and not just near film resonance.},
doi = {},
url = {https://www.osti.gov/biblio/12716}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Sep 16 00:00:00 EDT 1999},
month = {Thu Sep 16 00:00:00 EDT 1999}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: