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Title: Processing, Microstructure and Electric Properties of Buried Resistors in Low Temperature Co-Fired Ceramics

Abstract

The electrical properties were investigated for ruthenium oxide based devitrifiable resistors embedded within low temperature co-fired ceramics. Special attention was given to the processing conditions and their affects on resistance and temperature coefficient of resistance (TCR). Results indicate that the conductance for these buried resistors is limited by tunneling of charge carriers through the thin glass layer between ruthenium oxide particles. A modified version of the tunneling barrier model is proposed to more accurately account for the microstructure ripening observed during thermal processing. The model parameters determined from curve fitting show that charging energy (i.e., the energy required for a charge carrier to tunnel through the glass barrier) is strongly dependent on particle size and particle-particle separation between ruthenium oxide grains. Initial coarsening of ruthenium oxide grains was found to reduce the charging energy and lower the resistance. However, when extended ripening occurs, the increase in particle-particle separation increases the charging energy, reduces the tunneling probability and gives rise to a higher resistance. The trade-off between these two effects results an optimum microstructure with a minimum resistance and TCR. Furthermore, the TCR of these resistors has been shown to be governed by the magnitude of the charging energy. Model parametersmore » determined by our analysis appear to provide quantitative physical interpretations to the microstructural change in the resistor, which in turn, are controlled by the processing conditions.« less

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
12679
Report Number(s):
SAND99-2412J
Journal ID: ISSN 0021-8979; JAPIAU; TRN: AH200120%%385
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Other Information: PBD: 17 Sep 1999; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CERAMICS; CHARGE CARRIERS; ELECTRICAL PROPERTIES; GLASS; MICROSTRUCTURE; PARTICLE SIZE; RESISTORS; RUTHENIUM OXIDES; TEMPERATURE COEFFICIENT

Citation Formats

Dimos, D.B., Kotula, P.G., Miera, B.K., Rodriguez, M.A., and Yang, Pin. Processing, Microstructure and Electric Properties of Buried Resistors in Low Temperature Co-Fired Ceramics. United States: N. p., 1999. Web.
Dimos, D.B., Kotula, P.G., Miera, B.K., Rodriguez, M.A., & Yang, Pin. Processing, Microstructure and Electric Properties of Buried Resistors in Low Temperature Co-Fired Ceramics. United States.
Dimos, D.B., Kotula, P.G., Miera, B.K., Rodriguez, M.A., and Yang, Pin. Fri . "Processing, Microstructure and Electric Properties of Buried Resistors in Low Temperature Co-Fired Ceramics". United States. https://www.osti.gov/servlets/purl/12679.
@article{osti_12679,
title = {Processing, Microstructure and Electric Properties of Buried Resistors in Low Temperature Co-Fired Ceramics},
author = {Dimos, D.B. and Kotula, P.G. and Miera, B.K. and Rodriguez, M.A. and Yang, Pin},
abstractNote = {The electrical properties were investigated for ruthenium oxide based devitrifiable resistors embedded within low temperature co-fired ceramics. Special attention was given to the processing conditions and their affects on resistance and temperature coefficient of resistance (TCR). Results indicate that the conductance for these buried resistors is limited by tunneling of charge carriers through the thin glass layer between ruthenium oxide particles. A modified version of the tunneling barrier model is proposed to more accurately account for the microstructure ripening observed during thermal processing. The model parameters determined from curve fitting show that charging energy (i.e., the energy required for a charge carrier to tunnel through the glass barrier) is strongly dependent on particle size and particle-particle separation between ruthenium oxide grains. Initial coarsening of ruthenium oxide grains was found to reduce the charging energy and lower the resistance. However, when extended ripening occurs, the increase in particle-particle separation increases the charging energy, reduces the tunneling probability and gives rise to a higher resistance. The trade-off between these two effects results an optimum microstructure with a minimum resistance and TCR. Furthermore, the TCR of these resistors has been shown to be governed by the magnitude of the charging energy. Model parameters determined by our analysis appear to provide quantitative physical interpretations to the microstructural change in the resistor, which in turn, are controlled by the processing conditions.},
doi = {},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {9}
}