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Title: Mechanistic Feature-Scale Profile Simulation of SiO2LPCVD by TEOS Pyrolysis

Abstract

Simulation of chemical vapor deposition (CVD) in submicron features typical of semiconductor devices has been facilitated by extending the EVOLVE thin film etch and deposition simulation code to use thermal reaction mechanisms expressed in the Chemkin format. This allows consistent coupling between EVOLVE and reactor simulation codes that use Chemkin. In an application of a reactor-scale simulation code providing surface fluxes to a feature-scale simulation code, a proposed reaction mechanism for TEOS pyrolysis to deposit SiO{sub 2}, which had been applied successfully to reactor-scale simulation, is seen not to predict the low step coverage over trenches observed under short reactor residence time conditions. An apparent discrepancy between the mechanism and profile-evolution observations is a reduced degree of sensitivity of the deposition rate to the presence of reaction products, i.e., the byproduct inhibition effect is underpredicted. The cause of the proposed mechanism's insensitivity to byproduct inhibition is investigated with the combined reactor and topography simulators first by manipulating the surface to volume ratio of a simulated reactor and second by calibrating parameters in the proposed mechanism such as the calculated free energies of surface molecules. The conclusion is that the byproduct inhibition can not be enhanced to fit profile evolution datamore » without comprising agreement with reactor scale data by simply adjusting mechanism parameters. Thus, additional surface reaction channels seem to be required to reproduce simultaneously experimental reactor-scale growth rates and experimental step coverages.« less

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
12674
Report Number(s):
SAND99-2407J
TRN: AH200120%%463
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Journal Vacuum Society Technology
Additional Journal Information:
Other Information: Submitted to Journal Vacuum Society Technology; PBD: 13 Sep 1999
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; PYROLYSIS; REACTION KINETICS; SEMICONDUCTOR DEVICES; SENSITIVITY; SIMULATION; SIMULATORS; THIN FILMS; TOPOGRAPHY

Citation Formats

CALE, TIMOTHY S., LABUN, ANDREW H., and MOFFAT, HARRY K. Mechanistic Feature-Scale Profile Simulation of SiO2LPCVD by TEOS Pyrolysis. United States: N. p., 1999. Web.
CALE, TIMOTHY S., LABUN, ANDREW H., & MOFFAT, HARRY K. Mechanistic Feature-Scale Profile Simulation of SiO2LPCVD by TEOS Pyrolysis. United States.
CALE, TIMOTHY S., LABUN, ANDREW H., and MOFFAT, HARRY K. Mon . "Mechanistic Feature-Scale Profile Simulation of SiO2LPCVD by TEOS Pyrolysis". United States. https://www.osti.gov/servlets/purl/12674.
@article{osti_12674,
title = {Mechanistic Feature-Scale Profile Simulation of SiO2LPCVD by TEOS Pyrolysis},
author = {CALE, TIMOTHY S. and LABUN, ANDREW H. and MOFFAT, HARRY K.},
abstractNote = {Simulation of chemical vapor deposition (CVD) in submicron features typical of semiconductor devices has been facilitated by extending the EVOLVE thin film etch and deposition simulation code to use thermal reaction mechanisms expressed in the Chemkin format. This allows consistent coupling between EVOLVE and reactor simulation codes that use Chemkin. In an application of a reactor-scale simulation code providing surface fluxes to a feature-scale simulation code, a proposed reaction mechanism for TEOS pyrolysis to deposit SiO{sub 2}, which had been applied successfully to reactor-scale simulation, is seen not to predict the low step coverage over trenches observed under short reactor residence time conditions. An apparent discrepancy between the mechanism and profile-evolution observations is a reduced degree of sensitivity of the deposition rate to the presence of reaction products, i.e., the byproduct inhibition effect is underpredicted. The cause of the proposed mechanism's insensitivity to byproduct inhibition is investigated with the combined reactor and topography simulators first by manipulating the surface to volume ratio of a simulated reactor and second by calibrating parameters in the proposed mechanism such as the calculated free energies of surface molecules. The conclusion is that the byproduct inhibition can not be enhanced to fit profile evolution data without comprising agreement with reactor scale data by simply adjusting mechanism parameters. Thus, additional surface reaction channels seem to be required to reproduce simultaneously experimental reactor-scale growth rates and experimental step coverages.},
doi = {},
journal = {Journal Vacuum Society Technology},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {9}
}