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Title: Comparison between ion beam and fast neutron irradiation in silicon BJTs.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1266902
Report Number(s):
SAND2007-1236C
526711
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the HEART Conference held March 5-9, 2007 in San Diego, CA.
Country of Publication:
United States
Language:
English

Citation Formats

Bielejec, Edward S, Vizkelethy, Gyorgy, Fleming, Robert M., King, Donald B, Griffin, Patrick J, and Doyle, Barney Lee. Comparison between ion beam and fast neutron irradiation in silicon BJTs.. United States: N. p., 2007. Web.
Bielejec, Edward S, Vizkelethy, Gyorgy, Fleming, Robert M., King, Donald B, Griffin, Patrick J, & Doyle, Barney Lee. Comparison between ion beam and fast neutron irradiation in silicon BJTs.. United States.
Bielejec, Edward S, Vizkelethy, Gyorgy, Fleming, Robert M., King, Donald B, Griffin, Patrick J, and Doyle, Barney Lee. Thu . "Comparison between ion beam and fast neutron irradiation in silicon BJTs.". United States. doi:. https://www.osti.gov/servlets/purl/1266902.
@article{osti_1266902,
title = {Comparison between ion beam and fast neutron irradiation in silicon BJTs.},
author = {Bielejec, Edward S and Vizkelethy, Gyorgy and Fleming, Robert M. and King, Donald B and Griffin, Patrick J and Doyle, Barney Lee},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Feb 01 00:00:00 EST 2007},
month = {Thu Feb 01 00:00:00 EST 2007}
}

Conference:
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  • The electrical and switching characteristics of high power semiconductor switches subjected to high levels of neutron fluences and gamma doses must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect switch performance are briefly discussed. The effects of post-irradiation thermal anneals at 300 K and up to 425 K for NPN Bipolar Junction Transistorsmore » (BJTs), N-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and N-channel Static Induction Transistors (SITs) are discussed in terms of recovery of degraded electrical and switching parameters caused by either neutron or gamma irradiation. The important experimental results from these annealing tests show that BJTs have very good recovery to leakage current degradation but poor recovery to current gain degradation; MOSFETs show some recovery in gate-source threshold voltage degradation but no significant recovery in drain-source on-resistance degradation; and likewise, SITs show no significant recovery in drain-source on-resistance degradation.« less
  • The direct ion beam deposition (IBD) technique has been used to study the formation of oriented aluminum films on single crystal silicon substrates. In the IBD process, thin film growth is accomplished by decelerating a magnetically-analyzed ion beam to low energies (10--200 eV) for direct deposition onto the substrate under UHV conditions. The energy of the incident ions can be selected to provide the desired growth conditions, and the mass analysis ensures good beam purity. The aluminum on silicon system is one which has been studied extensively by ionized cluster beam (ICB) deposition. In this work, we have studied themore » formation of such films by IBD with emphasis on the effects of ion energy, substrate temperature, and surface cleanliness. Oriented films have been grown on Si(111) at temperatures from 40{degree} to 300{degree}C and with ion energies from 30 to 120 eV per ion. Completed films were analyzed by ion scattering, x-ray diffraction, scanning electron microscopy, and optical microscopy. Results achieved for thin films grown by IBD are compared with results for similar films grown by ICB deposition. 15 refs., 3 figs.« less