skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Stacking-dependent interlayer coupling in trilayer MoS 2 with broken inversion symmetry

Abstract

The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS 2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin–orbit coupling (SOC) and interlayer coupling in different structural symmetries. Lastly, such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS 2 blocks.

Authors:
 [1];  [1];  [1];  [2];  [1];  [1];  [1];  [3];  [4];  [1]
  1. Nanyang Technological Univ. (Singapore)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Chinese Academy of Sciences, Changchun (People's Republic of China)
  4. Academia Sinica, Taipei (Taiwan)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1265956
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 15; Journal Issue: 12; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Yan, Jiaxu, Wang, Xingli, Tay, Beng Kang, Zhou, Wu, Liu, Zheng, Shen, Ze Xiang, Xia, Juan, Liu, Lei, Kuo, Jer -Lai, and Chen, Shoushun. Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry. United States: N. p., 2015. Web. doi:10.1021/acs.nanolett.5b03597.
Yan, Jiaxu, Wang, Xingli, Tay, Beng Kang, Zhou, Wu, Liu, Zheng, Shen, Ze Xiang, Xia, Juan, Liu, Lei, Kuo, Jer -Lai, & Chen, Shoushun. Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry. United States. doi:10.1021/acs.nanolett.5b03597.
Yan, Jiaxu, Wang, Xingli, Tay, Beng Kang, Zhou, Wu, Liu, Zheng, Shen, Ze Xiang, Xia, Juan, Liu, Lei, Kuo, Jer -Lai, and Chen, Shoushun. Fri . "Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry". United States. doi:10.1021/acs.nanolett.5b03597. https://www.osti.gov/servlets/purl/1265956.
@article{osti_1265956,
title = {Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry},
author = {Yan, Jiaxu and Wang, Xingli and Tay, Beng Kang and Zhou, Wu and Liu, Zheng and Shen, Ze Xiang and Xia, Juan and Liu, Lei and Kuo, Jer -Lai and Chen, Shoushun},
abstractNote = {The stacking configuration in few-layer two-dimensional (2D) materials results in different structural symmetries and layer-to-layer interactions, and hence it provides a very useful parameter for tuning their electronic properties. For example, ABA-stacking trilayer graphene remains semimetallic similar to that of monolayer, while ABC-stacking is predicted to be a tunable band gap semiconductor under an external electric field. Such stacking dependence resulting from many-body interactions has recently been the focus of intense research activities. Here we demonstrate that few-layer MoS2 samples grown by chemical vapor deposition with different stacking configurations (AA, AB for bilayer; AAB, ABB, ABA, AAA for trilayer) exhibit distinct coupling phenomena in both photoluminescence and Raman spectra. By means of ultralow-frequency (ULF) Raman spectroscopy, we demonstrate that the evolution of interlayer interaction with various stacking configurations correlates strongly with layer-breathing mode (LBM) vibrations. Our ab initio calculations reveal that the layer-dependent properties arise from both the spin–orbit coupling (SOC) and interlayer coupling in different structural symmetries. Lastly, such detailed understanding provides useful guidance for future spintronics fabrication using various stacked few-layer MoS2 blocks.},
doi = {10.1021/acs.nanolett.5b03597},
journal = {Nano Letters},
issn = {1530-6984},
number = 12,
volume = 15,
place = {United States},
year = {2015},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 24 works
Citation information provided by
Web of Science

Save / Share:

Works referencing / citing this record:

Phase evolution of lithium intercalation dynamics in 2H-MoS 2
journal, January 2017

  • Xia, Juan; Wang, Jin; Chao, Dongliang
  • Nanoscale, Vol. 9, Issue 22
  • DOI: 10.1039/c7nr02028g

Controlled Vapor Growth and Nonlinear Optical Applications of Large-Area 3R Phase WS 2 and WSe 2 Atomic Layers
journal, January 2019

  • Zeng, Zhouxiaosong; Sun, Xingxia; Zhang, Danliang
  • Advanced Functional Materials, Vol. 29, Issue 11
  • DOI: 10.1002/adfm.201806874

Facile Synthesis of Single Crystal PtSe 2 Nanosheets for Nanoscale Electronics
journal, October 2016

  • Wang, Zegao; Li, Qiang; Besenbacher, Flemming
  • Advanced Materials, Vol. 28, Issue 46
  • DOI: 10.1002/adma.201602889

Differentiating Polymorphs in Molybdenum Disulfide via Electron Microscopy
journal, August 2018


Intrinsic Van Der Waals Magnetic Materials from Bulk to the 2D Limit: New Frontiers of Spintronics
journal, May 2019


Healing of Planar Defects in 2D Materials via Grain Boundary Sliding
journal, February 2019


Atomic‐Scale Fabrication of In‐Plane Heterojunctions of Few‐Layer MoS 2 via In Situ Scanning Transmission Electron Microscopy
journal, December 2019


Photoluminescence Quenching and SERS in Tri-layer MoS2 Flakes
journal, June 2019

  • Garg, Preeti; Laishram, Radhapiyari; Raman, R.
  • Journal of Electronic Materials, Vol. 48, Issue 9
  • DOI: 10.1007/s11664-019-07364-7

Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy
journal, February 2019


Structural stability and magnetic-exchange coupling in Mn-doped monolayer/bilayer MoS 2
journal, January 2018

  • Fang, Qinglong; Zhao, Xumei; Huang, Yuhong
  • Physical Chemistry Chemical Physics, Vol. 20, Issue 1
  • DOI: 10.1039/c7cp05988d

Atomic structure of defects and dopants in 2D layered transition metal dichalcogenides
journal, January 2018

  • Wang, Shanshan; Robertson, Alex; Warner, Jamie H.
  • Chemical Society Reviews, Vol. 47, Issue 17
  • DOI: 10.1039/c8cs00236c

Davydov splitting and polytypism in few-layer MoS 2
journal, October 2018


Dimensionality of excitons in stacked van der Waals materials: The example of hexagonal boron nitride
journal, June 2018