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Title: A Novel Backside Gate Structure to Improve Device Performance

 [1];  [2];  [2];  [2];  [1];  [3];  [4];  [1]
  1. University of Florida
  2. University of Florida, Gainesville
  3. ORNL
  4. Arizona State University
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: 227th ECS Meeting, Chicago, IL, USA, 20150524, 20150528
Country of Publication:
United States

Citation Formats

Hwang, Ya-Hsi, Zhu, W., Dong, C., Ahn, S., Ren, F., Kravchenko, Ivan I, Smith, David J, and Pearton, S. J. A Novel Backside Gate Structure to Improve Device Performance. United States: N. p., 2015. Web.
Hwang, Ya-Hsi, Zhu, W., Dong, C., Ahn, S., Ren, F., Kravchenko, Ivan I, Smith, David J, & Pearton, S. J. A Novel Backside Gate Structure to Improve Device Performance. United States.
Hwang, Ya-Hsi, Zhu, W., Dong, C., Ahn, S., Ren, F., Kravchenko, Ivan I, Smith, David J, and Pearton, S. J. 2015. "A Novel Backside Gate Structure to Improve Device Performance". United States. doi:.
title = {A Novel Backside Gate Structure to Improve Device Performance},
author = {Hwang, Ya-Hsi and Zhu, W. and Dong, C. and Ahn, S. and Ren, F. and Kravchenko, Ivan I and Smith, David J and Pearton, S. J.},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2015,
month = 1

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