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Title: Improvement of Drain Breakdown Voltage with A Back-Side Gate on AlGaN/GaN High Electron Mobility Transistors

Abstract

The effect of a back gate on the dc performance of AlGaN/GaN high electron mobility transistor was investigated. The back gate was fabricated directly under the device active area by etching off the Si substrate, AlN nucleation layer, and graded AlGaN transition layer and depositing Ni/Au-based gate metal on the exposed GaN buffer layer. The reverse bias gate leakage current decreased from 3.9 × 10-5 to 1.2 × 10-5 mA/mm by applying -10 V at the back gate. Because of the suppression of gate leakage current by the back gate, the drain on/off ratio improved from 1.8 × 105 to 1.2 × 106 and the subthreshold swing from 204 to 137 mV/dec. The drain breakdown voltage could be improved by 40% when the back gate was biased at -25 V.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2]
  1. Univ. of Florida, Gainesville, FL (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1265741
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 33; Journal Issue: 4; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Hwang, Ya-Hsi, Dong, C., Hsieh, Y. -L., Zhu, W., Ahn, S., Ren, F., Pearton, S. J., and Kravchenko, Ivan I. Improvement of Drain Breakdown Voltage with A Back-Side Gate on AlGaN/GaN High Electron Mobility Transistors. United States: N. p., 2015. Web. doi:10.1116/1.4922022.
Hwang, Ya-Hsi, Dong, C., Hsieh, Y. -L., Zhu, W., Ahn, S., Ren, F., Pearton, S. J., & Kravchenko, Ivan I. Improvement of Drain Breakdown Voltage with A Back-Side Gate on AlGaN/GaN High Electron Mobility Transistors. United States. https://doi.org/10.1116/1.4922022
Hwang, Ya-Hsi, Dong, C., Hsieh, Y. -L., Zhu, W., Ahn, S., Ren, F., Pearton, S. J., and Kravchenko, Ivan I. 2015. "Improvement of Drain Breakdown Voltage with A Back-Side Gate on AlGaN/GaN High Electron Mobility Transistors". United States. https://doi.org/10.1116/1.4922022.
@article{osti_1265741,
title = {Improvement of Drain Breakdown Voltage with A Back-Side Gate on AlGaN/GaN High Electron Mobility Transistors},
author = {Hwang, Ya-Hsi and Dong, C. and Hsieh, Y. -L. and Zhu, W. and Ahn, S. and Ren, F. and Pearton, S. J. and Kravchenko, Ivan I.},
abstractNote = {The effect of a back gate on the dc performance of AlGaN/GaN high electron mobility transistor was investigated. The back gate was fabricated directly under the device active area by etching off the Si substrate, AlN nucleation layer, and graded AlGaN transition layer and depositing Ni/Au-based gate metal on the exposed GaN buffer layer. The reverse bias gate leakage current decreased from 3.9 × 10-5 to 1.2 × 10-5 mA/mm by applying -10 V at the back gate. Because of the suppression of gate leakage current by the back gate, the drain on/off ratio improved from 1.8 × 105 to 1.2 × 106 and the subthreshold swing from 204 to 137 mV/dec. The drain breakdown voltage could be improved by 40% when the back gate was biased at -25 V.},
doi = {10.1116/1.4922022},
url = {https://www.osti.gov/biblio/1265741}, journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
issn = {2166-2746},
number = 4,
volume = 33,
place = {United States},
year = {Tue Jun 02 00:00:00 EDT 2015},
month = {Tue Jun 02 00:00:00 EDT 2015}
}