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Title: Connecting thermoelectric performance and topological-insulator behavior: Bi 2Te 3 and Bi 2Te 2Se from first principles

Abstract

Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi 2Te 2Se in relation to Bi 2Te 3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

Authors:
 [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1265299
Alternate Identifier(s):
OSTI ID: 1180166
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 3; Journal Issue: 1; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 30 DIRECT ENERGY CONVERSION; 32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION

Citation Formats

Shi, Hongliang, Parker, David S., Du, Mao-Hua, and Singh, David J. Connecting thermoelectric performance and topological-insulator behavior: Bi2Te3 and Bi2Te2Se from first principles. United States: N. p., 2015. Web. doi:10.1103/PhysRevApplied.3.014004.
Shi, Hongliang, Parker, David S., Du, Mao-Hua, & Singh, David J. Connecting thermoelectric performance and topological-insulator behavior: Bi2Te3 and Bi2Te2Se from first principles. United States. doi:10.1103/PhysRevApplied.3.014004.
Shi, Hongliang, Parker, David S., Du, Mao-Hua, and Singh, David J. Tue . "Connecting thermoelectric performance and topological-insulator behavior: Bi2Te3 and Bi2Te2Se from first principles". United States. doi:10.1103/PhysRevApplied.3.014004. https://www.osti.gov/servlets/purl/1265299.
@article{osti_1265299,
title = {Connecting thermoelectric performance and topological-insulator behavior: Bi2Te3 and Bi2Te2Se from first principles},
author = {Shi, Hongliang and Parker, David S. and Du, Mao-Hua and Singh, David J.},
abstractNote = {Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi2Te2Se in relation to Bi2Te3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.},
doi = {10.1103/PhysRevApplied.3.014004},
journal = {Physical Review Applied},
issn = {2331-7019},
number = 1,
volume = 3,
place = {United States},
year = {2015},
month = {1}
}

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Cited by: 48 works
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