skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Contacts to Reactive Ion Etched n-AlxGal=xN.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1264077
Report Number(s):
SAND2006-0190C
526123
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Lehigh Center for Optical Technologies Workshop-Lehigh University held November 18, 2005 in Lehigh, PA.
Country of Publication:
United States
Language:
English

Citation Formats

Bogart, Katherine, Allerman, Andrew A., Horsey, M, Mohney, S., Nikiforov, A., and Cargill, S.. Contacts to Reactive Ion Etched n-AlxGal=xN.. United States: N. p., 2006. Web.
Bogart, Katherine, Allerman, Andrew A., Horsey, M, Mohney, S., Nikiforov, A., & Cargill, S.. Contacts to Reactive Ion Etched n-AlxGal=xN.. United States.
Bogart, Katherine, Allerman, Andrew A., Horsey, M, Mohney, S., Nikiforov, A., and Cargill, S.. Sun . "Contacts to Reactive Ion Etched n-AlxGal=xN.". United States. doi:. https://www.osti.gov/servlets/purl/1264077.
@article{osti_1264077,
title = {Contacts to Reactive Ion Etched n-AlxGal=xN.},
author = {Bogart, Katherine and Allerman, Andrew A. and Horsey, M and Mohney, S. and Nikiforov, A. and Cargill, S.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2006},
month = {Sun Jan 01 00:00:00 EST 2006}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • Oxide films were observed on InP mesa sidewalls and horizontal surfaces after CH{sub 4}/H{sub 2} reactive ion etch process. Auger electron spectroscopy and X-ray microanalysis in the transmission electron microscopy suggested that the films are In-Si-P or In-P oxides containing more In than P, depending on the RIE instrument utilized. It was suggested that excess In in the film is due to the preferential evaporation of P, and Si is due to the mask erosion during the RIE process. Oxidation of the elements was observed to occur during the subsequent oxygen plasma ashing process. The films presented a serious barriermore » during the subsequent fabrication processes, such as regrowth and chemical cleaning, while could be effectively removed by cleaning in a diluted HF solution.« less
  • The reliable experimental data set on neutron energy spectra from {sup 93}Nb and {sup 209}Bi (n,xn) reactions, measured during the late decade in a few laboratories at incident neutron energies from 5 to 26 MeV, was analyzed in one theoretical methodology. The main goal of the analysis was to determine the reaction mechanism contributions on the basis of contemporary semi-microscopic models for nucleon-nucleus reactions and structure.
  • Plasma etching is required to expose n-Al{sub x}Ga{sub 1-x}N layers for bottom-emitting ultraviolet light emitting diodes grown on sapphire. However, etching can increase the difficulty of forming Ohmic contacts. X-ray photoelectron spectroscopy and cathodoluminescence reveal how the semiconductor changes with etching and help explain why it becomes more difficult to form an Ohmic contact. A V/Al/V/Au metallization has been investigated for Ohmic contacts to n-Al{sub 0.58}Ga{sub 0.42}N etched with a BCl{sub 3}/Cl{sub 2}/Ar chemistry. Increased V thickness and higher annealing temperatures were required to obtain a specific contact resistance of 4.7x10{sup -4} {omega} cm{sup 2} for etched n-Al{sub 0.58}Ga{sub 0.42}Nmore » compared to optimized contacts on unetched films.« less
  • No abstract prepared.
  • The Schottky-barrier energy phi/sub B/ for Al, Ni, Co, Pd, Au, and Ag contacts on chemically etched <100> surfaces of both p- and n-type InP were measured and the metallurgical behavior of the contact structures were studied using Auger electron spectroscopy. phi/sub B/ was found to be a function of the chemical reactivity of the contact metal with the InP substrate. Extensive outdiffusion of In was observed in the Au and Ag contacts. The results indicate that the chemical effects at the metal-semiconductor interface are a determining factor in the formation of InP Schottky barriers.