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Title: Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots

Abstract

The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. In particular, we have studied the misfit dislocations that appear because of the high-lattice mismatch in the heterostructure. Our results have shown the formation of Lomer dislocations not only at the interface between the GaSb QDs and the GaAs substrate, but also at the interface with the GaAs capping layer, which is not a frequent observation. The analysis of these dislocations points to the existence of chains of dislocation loops around the QDs. The dislocation core of the observed defects has been characterized, showing that they are reconstructed Lomer dislocations, which have less distortion at the dislocation core in comparison to unreconstructed ones. As a result, strain measurements using geometric phase analysis show that these dislocations may not fully relax the strain due to the lattice mismatch in the GaSb QDs.

Authors:
 [1];  [2];  [2];  [3];  [4];  [4];  [2]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. of Cadiz, Cadiz (Spain)
  3. Lancaster Univ., Lancaster (United Kingdom); Univ. Putra Malaysia, Selangor Darul Ehsan (Malaysia)
  4. Lancaster Univ., Lancaster (United Kingdom)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1263886
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Journal of Materials Science
Additional Journal Information:
Journal Volume: 51; Journal Issue: 16; Journal ID: ISSN 0022-2461
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chisholm, Matthew F., Fernandez-Delgado, N., Herrera, M., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., and Molina, S. I. Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots. United States: N. p., 2016. Web. doi:10.1007/s10853-016-0051-0.
Chisholm, Matthew F., Fernandez-Delgado, N., Herrera, M., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., & Molina, S. I. Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots. United States. doi:10.1007/s10853-016-0051-0.
Chisholm, Matthew F., Fernandez-Delgado, N., Herrera, M., Kamarudin, M. A., Zhuang, Q. D., Hayne, M., and Molina, S. I. Tue . "Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots". United States. doi:10.1007/s10853-016-0051-0.
@article{osti_1263886,
title = {Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots},
author = {Chisholm, Matthew F. and Fernandez-Delgado, N. and Herrera, M. and Kamarudin, M. A. and Zhuang, Q. D. and Hayne, M. and Molina, S. I.},
abstractNote = {The structural quality of GaSb/GaAs quantum dots (QDs) has been analyzed at atomic scale by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy. In particular, we have studied the misfit dislocations that appear because of the high-lattice mismatch in the heterostructure. Our results have shown the formation of Lomer dislocations not only at the interface between the GaSb QDs and the GaAs substrate, but also at the interface with the GaAs capping layer, which is not a frequent observation. The analysis of these dislocations points to the existence of chains of dislocation loops around the QDs. The dislocation core of the observed defects has been characterized, showing that they are reconstructed Lomer dislocations, which have less distortion at the dislocation core in comparison to unreconstructed ones. As a result, strain measurements using geometric phase analysis show that these dislocations may not fully relax the strain due to the lattice mismatch in the GaSb QDs.},
doi = {10.1007/s10853-016-0051-0},
journal = {Journal of Materials Science},
issn = {0022-2461},
number = 16,
volume = 51,
place = {United States},
year = {2016},
month = {5}
}

Works referenced in this record:

GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response
journal, April 2007

  • Laghumavarapu, R. B.; Moscho, A.; Khoshakhlagh, A.
  • Applied Physics Letters, Vol. 90, Issue 17
  • DOI: 10.1063/1.2734492

High Efficiency Carrier Multiplication in PbSe Nanocrystals: Implications for Solar Energy Conversion
journal, May 2004


III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
journal, October 2006

  • Balakrishnan, G.; Tatebayashi, J.; Khoshakhlagh, A.
  • Applied Physics Letters, Vol. 89, Issue 16
  • DOI: 10.1063/1.2362999

Z -contrast imaging of dislocation cores at the GaAs/Si interface
journal, October 2002

  • Lopatin, S.; Pennycook, S. J.; Narayan, J.
  • Applied Physics Letters, Vol. 81, Issue 15
  • DOI: 10.1063/1.1511808

Quantitative analysis of interfacial strain in InAs/GaSb superlattices by aberration-corrected HRTEM and HAADF-STEM
journal, April 2013


Progress in Infrared Photodetectors Since 2000
journal, April 2013


Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates
journal, June 2007

  • Noh, Y. K.; Hwang, Y. J.; Kim, M. D.
  • Journal of the Korean Physical Society, Vol. 50, Issue 6
  • DOI: 10.3938/jkps.50.1929

GaSb film growth on GaAs substrate by MBE
conference, November 2005

  • Li, Lin; Liu, Guo-jun; Wang, Yong
  • Asia-Pacific Optical Communications, SPIE Proceedings
  • DOI: 10.1117/12.635146

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
journal, April 2012

  • Smakman, E. P.; Garleff, J. K.; Young, R. J.
  • Applied Physics Letters, Vol. 100, Issue 14
  • DOI: 10.1063/1.3701614

Strain effects and atomic arrangements of 60° and 90° dislocations near the ZnTe/GaAs heterointerface
journal, March 2001

  • Kim, T. W.; Lee, D. U.; Lee, H. S.
  • Applied Physics Letters, Vol. 78, Issue 10
  • DOI: 10.1063/1.1349866

High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate
journal, June 2007

  • Kim, Y. H.; Lee, J. Y.; Noh, Y. G.
  • Applied Physics Letters, Vol. 90, Issue 24
  • DOI: 10.1063/1.2747674

Antimony-Mediated Control of Misfit Dislocations and Strain at the Highly Lattice Mismatched GaSb/GaAs Interface
journal, September 2013

  • Wang, Yi; Ruterana, Pierre; Chen, Jun
  • ACS Applied Materials & Interfaces, Vol. 5, Issue 19
  • DOI: 10.1021/am4028907

Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy
journal, May 2003

  • Hÿtch, Martin J.; Putaux, Jean-Luc; Pénisson, Jean-Michel
  • Nature, Vol. 423, Issue 6937
  • DOI: 10.1038/nature01638

A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition
journal, November 2011

  • Zhou, W.; Tang, W.; Lau, K. M.
  • Applied Physics Letters, Vol. 99, Issue 22
  • DOI: 10.1063/1.3663571

Interface structure of deposited GaSb on GaAs (001): Monte Carlo simulation and experimental study
journal, October 2011


Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
journal, March 2006

  • Huang, S. H.; Balakrishnan, G.; Khoshakhlagh, A.
  • Applied Physics Letters, Vol. 88, Issue 13
  • DOI: 10.1063/1.2172742

High-quality n-type aluminum gallium nitride thin films grown by interrupted deposition and in-situ thermal annealing
journal, February 2015


Strain-induced Stranski–Krastanov three-dimensional growth mode of GaSb quantum dot on GaAs substrate
journal, May 2009


Column-by-column compositional mapping by Z-contrast imaging
journal, January 2009


The impact of the initial surface reconstruction on heteroepitaxial film growth and defect formation
journal, June 2014


Interfacial misfit array formation for GaSb growth on GaAs
journal, May 2009

  • Huang, Shenghong; Balakrishnan, Ganesh; Huffaker, Diana L.
  • Journal of Applied Physics, Vol. 105, Issue 10
  • DOI: 10.1063/1.3129562

Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy
journal, June 1999

  • Suzuki, K.; Hogg, R. A.; Arakawa, Y.
  • Journal of Applied Physics, Vol. 85, Issue 12
  • DOI: 10.1063/1.370622

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
journal, May 2012

  • Carrington, Peter James; Mahajumi, Abu Syed; Wagener, Magnus C.
  • Physica B: Condensed Matter, Vol. 407, Issue 10
  • DOI: 10.1016/j.physb.2011.09.069

Quantitative measurement of displacement and strain fields from HREM micrographs
journal, August 1998


Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy
journal, May 1998

  • Kim, Joon-Hyung; Seong, Tae-Yeon; Mason, N. J.
  • Journal of Electronic Materials, Vol. 27, Issue 5
  • DOI: 10.1007/s11664-998-0178-0

Configuration of the misfit dislocation networks in uncapped and capped InN quantum dots
journal, August 2007

  • Lozano, J. G.; Sánchez, A. M.; García, R.
  • Applied Physics Letters, Vol. 91, Issue 7
  • DOI: 10.1063/1.2770776

A Pulsed Nonclassical Light Source Driven by an Integrated Electrically Triggered Quantum Dot Microlaser
journal, November 2015

  • Munnelly, Pierce; Heindel, Tobias; Karow, Matthias M.
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 21, Issue 6
  • DOI: 10.1109/JSTQE.2015.2418219

3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs
journal, July 2015