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Title: Structural characteristic correlated to the electronic band gap in Mo S 2

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1263698
Grant/Contract Number:  
NA0001974; FG02-99ER45775; FG02-94ER14466; AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 2; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chu, Shengqi, Park, Changyong, and Shen, Guoyin. Structural characteristic correlated to the electronic band gap in Mo S 2. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.94.020101.
Chu, Shengqi, Park, Changyong, & Shen, Guoyin. Structural characteristic correlated to the electronic band gap in Mo S 2. United States. doi:10.1103/PhysRevB.94.020101.
Chu, Shengqi, Park, Changyong, and Shen, Guoyin. Fri . "Structural characteristic correlated to the electronic band gap in Mo S 2". United States. doi:10.1103/PhysRevB.94.020101.
@article{osti_1263698,
title = {Structural characteristic correlated to the electronic band gap in Mo S 2},
author = {Chu, Shengqi and Park, Changyong and Shen, Guoyin},
abstractNote = {},
doi = {10.1103/PhysRevB.94.020101},
journal = {Physical Review B},
number = 2,
volume = 94,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2016},
month = {Fri Jul 15 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.94.020101

Citation Metrics:
Cited by: 1 work
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Works referenced in this record:

Emerging Photoluminescence in Monolayer MoS2
journal, April 2010

  • Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
  • Nano Letters, Vol. 10, Issue 4, p. 1271-1275
  • DOI: 10.1021/nl903868w

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010


Bandgap Engineering of Strained Monolayer and Bilayer MoS2
journal, July 2013

  • Conley, Hiram J.; Wang, Bin; Ziegler, Jed I.
  • Nano Letters, Vol. 13, Issue 8, p. 3626-3630
  • DOI: 10.1021/nl4014748

Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
journal, October 2012

  • Tongay, Sefaattin; Zhou, Jian; Ataca, Can
  • Nano Letters, Vol. 12, Issue 11, p. 5576-5580
  • DOI: 10.1021/nl302584w

Two-dimensional atomic crystals
journal, July 2005

  • Novoselov, K. S.; Jiang, D.; Schedin, F.
  • Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453
  • DOI: 10.1073/pnas.0502848102

Pressure-Dependent Optical and Vibrational Properties of Monolayer Molybdenum Disulfide
journal, December 2014

  • Nayak, Avinash P.; Pandey, Tribhuwan; Voiry, Damien
  • Nano Letters, Vol. 15, Issue 1, p. 346-353
  • DOI: 10.1021/nl5036397