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Title: Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1263697
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 117; Journal Issue: 3; Related Information: CHORUS Timestamp: 2016-07-15 18:09:10; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

DaSilva, Ashley M., Jung, Jeil, and MacDonald, Allan H. Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.117.036802.
DaSilva, Ashley M., Jung, Jeil, & MacDonald, Allan H. Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride. United States. doi:10.1103/PhysRevLett.117.036802.
DaSilva, Ashley M., Jung, Jeil, and MacDonald, Allan H. 2016. "Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride". United States. doi:10.1103/PhysRevLett.117.036802.
@article{osti_1263697,
title = {Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride},
author = {DaSilva, Ashley M. and Jung, Jeil and MacDonald, Allan H.},
abstractNote = {},
doi = {10.1103/PhysRevLett.117.036802},
journal = {Physical Review Letters},
number = 3,
volume = 117,
place = {United States},
year = 2016,
month = 7
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevLett.117.036802

Citation Metrics:
Cited by: 2works
Citation information provided by
Web of Science

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  • Two-dimensional (2D) interfaces between crystalline materials have been shown to generate unusual interfacial electronic states in complex oxides1-4. Recently, a onedimensional (1D) polar-on-nonpolar interface has been realized in hexagonal boron nitride (hBN) and graphene heterostructures 5-10, where a coherent 1D boundary is expected to possess peculiar electronic states dictated by edge states of graphene and the polarity of hBN 11-13. Here we present a combined scanning tunneling microscopy (STM) and firstprinciples theory study of the graphene-hBN boundary to provide a rare glimpse into the spatial and energetic distributions of the 1D boundary states in real-space. The interfaces studied here aremore » crystallographically coherent with sharp transitions from graphene zigzag edges to B (or N) terminated hBN atomic layers on a Cu foil substrate5. The revealed boundary states are about 0.6 eV below or above the Fermi energy depending on the termination of the hBN at the boundary, and are extended along but localized at the boundary with a lateral thickness of 2-3nm. These results suggest that unconventional physical effects similar to those observed at 2D interfaces can also exist in lower dimensions, opening a route for tuning of electronic properties at interfaces in 2D heterostructures.« less
  • Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed.
  • A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.