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Title: Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1263697
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 117 Journal Issue: 3; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

DaSilva, Ashley M., Jung, Jeil, and MacDonald, Allan H. Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.117.036802.
DaSilva, Ashley M., Jung, Jeil, & MacDonald, Allan H. Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride. United States. doi:10.1103/PhysRevLett.117.036802.
DaSilva, Ashley M., Jung, Jeil, and MacDonald, Allan H. Fri . "Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride". United States. doi:10.1103/PhysRevLett.117.036802.
@article{osti_1263697,
title = {Fractional Hofstadter States in Graphene on Hexagonal Boron Nitride},
author = {DaSilva, Ashley M. and Jung, Jeil and MacDonald, Allan H.},
abstractNote = {},
doi = {10.1103/PhysRevLett.117.036802},
journal = {Physical Review Letters},
number = 3,
volume = 117,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2016},
month = {Fri Jul 15 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevLett.117.036802

Citation Metrics:
Cited by: 4 works
Citation information provided by
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Works referenced in this record:

The electronic properties of graphene
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  • Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
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Boron nitride substrates for high-quality graphene electronics
journal, August 2010

  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172