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Title: Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Science (NA-113)
OSTI Identifier:
1262631
Report Number(s):
SAND2015-5463C
594817
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the InterPACK2015 held July 6-9, 2015 in San Francisco, CA.
Country of Publication:
United States
Language:
English

Citation Formats

Choi, Sukwon, Peake, Gregory M., Keeler, Gordon Arthur, Geib, Kent M., Briggs, Ronald D., Clevenger, Jascinda, Patrizi, Gary A., Klem, John F., and Nordquist, Christopher. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs.. United States: N. p., 2015. Web.
Choi, Sukwon, Peake, Gregory M., Keeler, Gordon Arthur, Geib, Kent M., Briggs, Ronald D., Clevenger, Jascinda, Patrizi, Gary A., Klem, John F., & Nordquist, Christopher. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs.. United States.
Choi, Sukwon, Peake, Gregory M., Keeler, Gordon Arthur, Geib, Kent M., Briggs, Ronald D., Clevenger, Jascinda, Patrizi, Gary A., Klem, John F., and Nordquist, Christopher. Wed . "Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs.". United States. doi:. https://www.osti.gov/servlets/purl/1262631.
@article{osti_1262631,
title = {Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs.},
author = {Choi, Sukwon and Peake, Gregory M. and Keeler, Gordon Arthur and Geib, Kent M. and Briggs, Ronald D. and Clevenger, Jascinda and Patrizi, Gary A. and Klem, John F. and Nordquist, Christopher},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jul 01 00:00:00 EDT 2015},
month = {Wed Jul 01 00:00:00 EDT 2015}
}

Conference:
Other availability
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  • Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less
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