Amorphization resistance of nano-engineered SiC under heavy ion irradiation

Journal Article · Sun Jun 19 00:00:00 EDT 2016 · Journal of Nuclear Materials

DOI:https://doi.org/10.1016/j.jnucmat.2016.06.031· OSTI ID:1261569

Imada, Kenta ^[1]; Ishimaru, Manabu ^[1]; Xue, Haizhou ^[2]; Zhang, Yanwen ^[3]; Shannon, Steven C. ^[4]; Weber, William J. ^[3]

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1. Kyushu Institute of Technology, Fukuoka (Japan)
2. Univ. of Tennessee, Knoxville, TN (United States)
3. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
4. North Carolina State Univ., Raleigh, NC (United States)

Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: AC05-00OR22725
• OSTI ID: 1261569
• Alternate ID(s): OSTI ID: 1325327
• Journal Information: Journal of Nuclear Materials, Vol. 478; ISSN 0022-3115
• Publisher: Elsevier
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SiC
amorphization
nanostructured materials
carbides
scanning/transmission electron microscopy (STEM)