Amber-green light-emitting diodes using order-disorder Al_xIn_1-xP heterostructures

Journal Article · Tue Jan 01 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4818477· OSTI ID:1260918

Christian, Theresa M. ^[1]; Beaton, Daniel A. ^[2]; Mukherjee, Kunal ^[3]; Alberi, Kirstin ^[2]; Fitzgerald, Eugene A. ^[3]; Mascarenhas, Angelo ^[2]

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1. National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

We demonstrate amber-green emission from Al _x In_{1– x} P light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded In y Ga_{1– y} As buffer layer and feature electron confinement based on the control of Al _x In_{1– x} P CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm². The light output at room temperature from our Al x In_{1– x} P LED structure emitting at 600 nm is 39% as bright as a Ga _x In_{1– x} P LED emitting at 650 nm.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1260918
• Report Number(s): NREL/JA-5900-59059
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 7; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
47 OTHER INSTRUMENTATION
LED
amber-green
diodes
solid-state lighting
SSL