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Title: Charge carrier dynamics and recombination in graded band gap CuIn 1-xGa xSe 2 polycrystalline thin-film photovoltaic solar cell absorbers

Abstract

We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn 1-xGa xSe 2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75–230 cm 2 V -1s -1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5×10 15–10 17cm -3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office
OSTI Identifier:
1260898
Report Number(s):
NREL/JA-5200-59036
Journal ID: ISSN 0021-8979
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 15
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; solar; thin-film; photovoltaic; PV; solar cell; polycrystalline

Citation Formats

Kuciauskas, Darius, Li, Jian V., Contreras, Miguel A., Pankow, Joel, Dippo, Patricia, Young, Matthew, Mansfield, Lorelle M., Noufi, Rommel, and Levi, Dean. Charge carrier dynamics and recombination in graded band gap CuIn1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers. United States: N. p., 2013. Web. doi:10.1063/1.4825211.
Kuciauskas, Darius, Li, Jian V., Contreras, Miguel A., Pankow, Joel, Dippo, Patricia, Young, Matthew, Mansfield, Lorelle M., Noufi, Rommel, & Levi, Dean. Charge carrier dynamics and recombination in graded band gap CuIn1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers. United States. doi:10.1063/1.4825211.
Kuciauskas, Darius, Li, Jian V., Contreras, Miguel A., Pankow, Joel, Dippo, Patricia, Young, Matthew, Mansfield, Lorelle M., Noufi, Rommel, and Levi, Dean. Tue . "Charge carrier dynamics and recombination in graded band gap CuIn1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers". United States. doi:10.1063/1.4825211.
@article{osti_1260898,
title = {Charge carrier dynamics and recombination in graded band gap CuIn1-xGaxSe2 polycrystalline thin-film photovoltaic solar cell absorbers},
author = {Kuciauskas, Darius and Li, Jian V. and Contreras, Miguel A. and Pankow, Joel and Dippo, Patricia and Young, Matthew and Mansfield, Lorelle M. and Noufi, Rommel and Levi, Dean},
abstractNote = {We report the results of spectroscopic time-resolved photoluminescence (TRPL) analysis for polycrystalline CuIn1-xGaxSe2 (CIGS) films. On the <5 ns time scale, we investigated minority carrier spatial redistribution from the initial absorption profile near the surface of the films to the conduction band minimum. Based on these data, the estimated minority carrier mobility is 75–230 cm2 V-1s-1. Full TRPL decays were analyzed using models for donor-acceptor pair (DAP) recombination. We estimated that the concentration of DAP recombination centers was 5×1015–1017cm-3. Data also show that Shockley-Reed-Hall and surface recombination are not significant for polycrystalline CIGS absorbers used in high-efficiency photovoltaic solar cells.},
doi = {10.1063/1.4825211},
journal = {Journal of Applied Physics},
number = 15,
volume = 114,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2013},
month = {Tue Jan 01 00:00:00 EST 2013}
}