Effective defect diffusion lengths in Ar-ion bombarded 3C-SiC
Journal Article
·
· Journal of Physics. D, Applied Physics
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States)
- Texas A & M Univ., College Station, TX (United States)
Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently developed pulsed ion beam method to measure effective defect diffusion lengths in 3C-SiC bombarded in the temperature range of 25–200 °C with 500 keV Ar ions. Results reveal a diffusion length of ~10 nm, which exhibits a weak temperature dependence, changing from 9 to 13 nm with increasing temperature. Lastly, these results have important implications for understanding and predicting radiation damage in SiC and for the development of radiation-resistant materials via interface-mediated defect reactions.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC52-07NA27344
- OSTI ID:
- 1260481
- Alternate ID(s):
- OSTI ID: 1247186
- Report Number(s):
- LLNL-JRNL-678147
- Journal Information:
- Journal of Physics. D, Applied Physics, Vol. 49, Issue 19; ISSN 0022-3727
- Publisher:
- IOP PublishingCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 8 works
Citation information provided by
Web of Science
Web of Science
Radiation defect dynamics in GaAs studied by pulsed ion beams
|
journal | July 2018 |
Similar Records
Time constant of defect relaxation in ion-irradiated 3C-SiC
Effects of collision cascade density on radiation defect dynamics in 3C-SiC
The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction
Journal Article
·
Mon May 18 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:1260481
+1 more
Effects of collision cascade density on radiation defect dynamics in 3C-SiC
Journal Article
·
Fri Mar 17 00:00:00 EDT 2017
· Scientific Reports
·
OSTI ID:1260481
The amorphization of 3C-SiC irradiated at moderately elevated temperatures as revealed by X-ray diffraction
Journal Article
·
Tue Sep 19 00:00:00 EDT 2017
· Acta Materialia
·
OSTI ID:1260481
+2 more