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Title: Magnetic multilayer structure

Abstract

A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
International Business Machines Corporation, Armonk NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1260217
Patent Number(s):
9,384,879
Application Number:
14/155,552
Assignee:
International Business Machines Corporation DOEEE
DOE Contract Number:  
EE0002892
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Jan 15
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, and Webb, Bucknell C. Magnetic multilayer structure. United States: N. p., 2016. Web.
Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, & Webb, Bucknell C. Magnetic multilayer structure. United States.
Herget, Philipp, O'Sullivan, Eugene J., Romankiw, Lubomyr T., Wang, Naigang, and Webb, Bucknell C. Tue . "Magnetic multilayer structure". United States. doi:. https://www.osti.gov/servlets/purl/1260217.
@article{osti_1260217,
title = {Magnetic multilayer structure},
author = {Herget, Philipp and O'Sullivan, Eugene J. and Romankiw, Lubomyr T. and Wang, Naigang and Webb, Bucknell C.},
abstractNote = {A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 05 00:00:00 EDT 2016},
month = {Tue Jul 05 00:00:00 EDT 2016}
}

Patent:

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