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Title: Epitaxial stabilization and phase instability of VO2 polymorphs

Abstract

The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400°C. In conclusion, our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.

Authors:
 [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1259840
Alternate Identifier(s):
OSTI ID: 1324055
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lee, Shinbuhm, Ivanov, Ilia N., Keum, Jong K., and Lee, Ho Nyung. Epitaxial stabilization and phase instability of VO2 polymorphs. United States: N. p., 2016. Web. doi:10.1038/srep19621.
Lee, Shinbuhm, Ivanov, Ilia N., Keum, Jong K., & Lee, Ho Nyung. Epitaxial stabilization and phase instability of VO2 polymorphs. United States. https://doi.org/10.1038/srep19621
Lee, Shinbuhm, Ivanov, Ilia N., Keum, Jong K., and Lee, Ho Nyung. 2016. "Epitaxial stabilization and phase instability of VO2 polymorphs". United States. https://doi.org/10.1038/srep19621. https://www.osti.gov/servlets/purl/1259840.
@article{osti_1259840,
title = {Epitaxial stabilization and phase instability of VO2 polymorphs},
author = {Lee, Shinbuhm and Ivanov, Ilia N. and Keum, Jong K. and Lee, Ho Nyung},
abstractNote = {The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400°C. In conclusion, our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.},
doi = {10.1038/srep19621},
url = {https://www.osti.gov/biblio/1259840}, journal = {Scientific Reports},
issn = {2045-2322},
number = ,
volume = 6,
place = {United States},
year = {Wed Jan 20 00:00:00 EST 2016},
month = {Wed Jan 20 00:00:00 EST 2016}
}

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Works referenced in this record:

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Degradation Mechanism of Vanadium Oxide Films When Grown on Y‐Stabilized ZrO 2 Above 500 °C
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Terahertz Electrodynamics in Transition Metal Oxides
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Ab initio study of Li, Mg and Al insertion into rutile VO 2 : fast diffusion and enhanced voltages for multivalent batteries
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Comparison of Li, Na, Mg and Al-ion insertion in vanadium pentoxides and vanadium dioxides
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Vanadium-containing electro and photocatalysts for the oxygen evolution reaction: a review
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Piezoelectric control of resistance switching in VO 2 /Pb(Zr 0.52 Ti 0.48 )O 3 heterostructure
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