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Title: Protecting the properties of monolayer MoS 2 on silicon based substrates with an atomically thin buffer

Abstract

Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS 2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS 2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO 2 substrates. Lastly, our demonstration provides a way of integrating MoS 2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.

Authors:
 [1];  [1];  [1];  [2];  [3];  [3];  [4];  [2];  [5];  [1]
  1. Okinawa Institute of Science and Technology Graduate Univ., Okinawa (Japan)
  2. Univ. of Michigan, Ann Arbor, MI (United States)
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  4. Northeastern Univ., Boston, MA (United States)
  5. Okinawa Institute of Science and Technology Graduate Univ., Okinawa (Japan); Southern Illinois Univ., Carbondale, IL (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1259305
Grant/Contract Number:  
AC02-05CH11231; DMR-1254314; W911NF-11-1-0362
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; surfaces, interfaces and thin films; two-dimensional materials

Citation Formats

Man, Michael K. L., Deckoff-Jones, Skylar, Winchester, Andrew, Shi, Guangsha, Gupta, Gautam, Mohite, Aditya D., Kar, Swastik, Kioupakis, Emmanouil, Talapatra, Saikat, and Dani, Keshav M. Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer. United States: N. p., 2016. Web. doi:10.1038/srep20890.
Man, Michael K. L., Deckoff-Jones, Skylar, Winchester, Andrew, Shi, Guangsha, Gupta, Gautam, Mohite, Aditya D., Kar, Swastik, Kioupakis, Emmanouil, Talapatra, Saikat, & Dani, Keshav M. Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer. United States. doi:10.1038/srep20890.
Man, Michael K. L., Deckoff-Jones, Skylar, Winchester, Andrew, Shi, Guangsha, Gupta, Gautam, Mohite, Aditya D., Kar, Swastik, Kioupakis, Emmanouil, Talapatra, Saikat, and Dani, Keshav M. Fri . "Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer". United States. doi:10.1038/srep20890. https://www.osti.gov/servlets/purl/1259305.
@article{osti_1259305,
title = {Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer},
author = {Man, Michael K. L. and Deckoff-Jones, Skylar and Winchester, Andrew and Shi, Guangsha and Gupta, Gautam and Mohite, Aditya D. and Kar, Swastik and Kioupakis, Emmanouil and Talapatra, Saikat and Dani, Keshav M.},
abstractNote = {Semiconducting 2D materials, like transition metal dichalcogenides (TMDs), have gained much attention for their potential in opto-electronic devices, valleytronic schemes, and semi-conducting to metallic phase engineering. However, like graphene and other atomically thin materials, they lose key properties when placed on a substrate like silicon, including quenching of photoluminescence, distorted crystalline structure, and rough surface morphology. The ability to protect these properties of monolayer TMDs, such as molybdenum disulfide (MoS2), on standard Si-based substrates, will enable their use in opto-electronic devices and scientific investigations. Here we show that an atomically thin buffer layer of hexagonal-boron nitride (hBN) protects the range of key opto-electronic, structural, and morphological properties of monolayer MoS2 on Si-based substrates. The hBN buffer restores sharp diffraction patterns, improves monolayer flatness by nearly two-orders of magnitude, and causes over an order of magnitude enhancement in photoluminescence, compared to bare Si and SiO2 substrates. Lastly, our demonstration provides a way of integrating MoS2 and other 2D monolayers onto standard Si-substrates, thus furthering their technological applications and scientific investigations.},
doi = {10.1038/srep20890},
journal = {Scientific Reports},
issn = {2045-2322},
number = ,
volume = 6,
place = {United States},
year = {2016},
month = {2}
}

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Cited by: 15 works
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