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Title: Nanofabrication on unconventional substrates using transferred hard masks

Abstract

Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantation are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.

Authors:
 [1];  [1];  [2];  [2];  [1];  [3];  [1];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
  2. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1258778
Grant/Contract Number:  
AC02-98CH10886
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; optical properties of diamond; nanophotonics and plasmonics; nanoscience and technology; surface patterning

Citation Formats

Li, Luozhou, Bayn, Igal, Lu, Ming, Nam, Chang -Yong, Schroder, Tim, Stein, Aaron, Harris, Nicholas C., and Englund, Dirk. Nanofabrication on unconventional substrates using transferred hard masks. United States: N. p., 2015. Web. doi:10.1038/srep07802.
Li, Luozhou, Bayn, Igal, Lu, Ming, Nam, Chang -Yong, Schroder, Tim, Stein, Aaron, Harris, Nicholas C., & Englund, Dirk. Nanofabrication on unconventional substrates using transferred hard masks. United States. doi:10.1038/srep07802.
Li, Luozhou, Bayn, Igal, Lu, Ming, Nam, Chang -Yong, Schroder, Tim, Stein, Aaron, Harris, Nicholas C., and Englund, Dirk. Thu . "Nanofabrication on unconventional substrates using transferred hard masks". United States. doi:10.1038/srep07802. https://www.osti.gov/servlets/purl/1258778.
@article{osti_1258778,
title = {Nanofabrication on unconventional substrates using transferred hard masks},
author = {Li, Luozhou and Bayn, Igal and Lu, Ming and Nam, Chang -Yong and Schroder, Tim and Stein, Aaron and Harris, Nicholas C. and Englund, Dirk},
abstractNote = {Here, a major challenge in nanofabrication is to pattern unconventional substrates that cannot be processed for a variety of reasons, such as incompatibility with spin coating, electron beam lithography, optical lithography, or wet chemical steps. Here, we present a versatile nanofabrication method based on re-usable silicon membrane hard masks, patterned using standard lithography and mature silicon processing technology. These masks, transferred precisely onto targeted regions, can be in the millimetre scale. They allow for fabrication on a wide range of substrates, including rough, soft, and non-conductive materials, enabling feature linewidths down to 10 nm. Plasma etching, lift-off, and ion implantation are realized without the need for scanning electron/ion beam processing, UV exposure, or wet etching on target substrates.},
doi = {10.1038/srep07802},
journal = {Scientific Reports},
number = ,
volume = 5,
place = {United States},
year = {Thu Jan 15 00:00:00 EST 2015},
month = {Thu Jan 15 00:00:00 EST 2015}
}

Journal Article:
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Cited by: 15 works
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