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Title: Optical Properties of Fluid Hydrogen at the Transition to a Conducting State

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1258704
Grant/Contract Number:
FC52-08NA28554; SC0001057
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 116; Journal Issue: 25; Related Information: CHORUS Timestamp: 2016-12-23 16:30:42; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

McWilliams, R. Stewart, Dalton, D. Allen, Mahmood, Mohammad F., and Goncharov, Alexander F. Optical Properties of Fluid Hydrogen at the Transition to a Conducting State. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.116.255501.
McWilliams, R. Stewart, Dalton, D. Allen, Mahmood, Mohammad F., & Goncharov, Alexander F. Optical Properties of Fluid Hydrogen at the Transition to a Conducting State. United States. doi:10.1103/PhysRevLett.116.255501.
McWilliams, R. Stewart, Dalton, D. Allen, Mahmood, Mohammad F., and Goncharov, Alexander F. 2016. "Optical Properties of Fluid Hydrogen at the Transition to a Conducting State". United States. doi:10.1103/PhysRevLett.116.255501.
@article{osti_1258704,
title = {Optical Properties of Fluid Hydrogen at the Transition to a Conducting State},
author = {McWilliams, R. Stewart and Dalton, D. Allen and Mahmood, Mohammad F. and Goncharov, Alexander F.},
abstractNote = {},
doi = {10.1103/PhysRevLett.116.255501},
journal = {Physical Review Letters},
number = 25,
volume = 116,
place = {United States},
year = 2016,
month = 6
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevLett.116.255501

Citation Metrics:
Cited by: 6works
Citation information provided by
Web of Science

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  • On the basis of the crystal structures of ..beta..-(ET)/sub 2/X (X/sup -/ = IBr/sub 2//sup -/, AuI/sub 2//sup -/, I/sub 3//sup -/) determined at low temperature under ambient and applied pressure, they examined the structural factors responsible for the occurrence of the structural modulation in ..beta..-(ET)/sub 2/I/sub 3/ under ambient pressure, its disappearance under pressure greater than approx. 0.5 kbar, and its effect on the superconducting transition temperature T/sub c/ and the dependence of T/sub c/ on anion X/sup -/ in ..beta..-(ET)/sub 2/X. ET is an abbreviation for BEDT-TTF, i.e., bis(ethylenedithio)tetrathiafulvalene. The electron-phonon coupling constants, lambda, calculated for ..beta..-(ET)/sub 2/Xmore » on the basis of the McMillan equation suggest that the lattice softness with respect to translational and/or librational modes of vibration increases in the order ..beta..-(ET)/sub 2/I/sub 3/ < ..beta..-(ET)/sub 2/IBr/sub 2/ < ..beta..-(ET)/sub 2/AuI/sub 2/ < ..beta..*-(ET)/sub 2/I/sub 3/, where ..beta..*-(ET)/sub 2/I/sub 3/ refers to the ..beta..-(ET)/sub 2/I/sub 3/ salt under an applied pressure greater than approx. 0.5 kbar with T/sub c/ similarly ordered 8 K. They also discuss the importance of hydrogen...anion interactions in understanding the lower T/sub c/ values (1-1.5 K) of the other class of organic superconductors (TMTSF)/sub 2/X (X/sup -/ = ClO/sub 4//sup -/, PF/sub 6//sup -/) compared to the ..beta..-(ET)/sub 2/X systems and the implications concerning the synthesis of new organic superconductors.« less
  • Transparent conducting oxides were successfully prepared from mixed zinc nitrate hexahydrate and indium nitrate hydrate solutions in ethylene glycol using sol-gel technique. The In content in the film was varied (0, 2, 10, 20, 40, 75 and 100 atom %). Films were prepared by spin coating of the liquid precursors followed by thermal decomposition at 400° C after each layer. According to X-ray diffraction (XRD) measurements, the pure ZnO and pure InO films (0 and at 100 % In) were crystalline as-deposited. The crystallinity was suppressed in mixed compositions such that the films with compositions between 10 and 75 atmore » % were amorphous. All the films were transparent with the transmission cut-off frequency near 400 nm, which is characteristic of TCO materials. All as-deposited films were conductive with 0 and 100 atom % In having the lowest resistivities. The resistivity of all compositions were improved by post-deposition reducing anneal in pure Ar at 300° C. The lowest resistivity of 0.2 Ωcm was obtained for the pure ZnO after Ar anneal. It was two-orders of magnitude higher than reported in the literature for the In-doped ZnO, which was attributed to the low processing temperature. The resistivities of as-deposited and annealed in Ar films were increased by consequent air anneal at 300° C.« less
  • The theory of small perturbations is used to study the transition regimes in the course of which the equations which control the flows of a conducting fluid submitted to a magnetic field parallel to the velocity change type. The simplified equations, the orders of magnitude of the quantity of perturbation, and the similitude parameters are obtained. (tr-auth)
  • By combining diamond-anvil-cell and laser-driven shock wave techniques, we produced dense He samples up to 1.5 g/cm{sup 3} at temperatures reaching 60 kK. Optical measurements of reflectivity and temperature show that electronic conduction in He at these conditions is temperature-activated (semiconducting). A fit to the data suggests that the mobility gap closes with increasing density, and that hot dense He becomes metallic above {approx}1.9 g/cm{sup 3}. These data provide a benchmark to test models that describe He ionization at conditions found in astrophysical objects, such as cold white dwarf atmospheres.