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Title: Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

Abstract

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

Authors:
 [1];  [1];  [1];  [1];  [1]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [2]; ORCiD logo [1]
  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Research Org.:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1258327
Grant/Contract Number:
FG02-04ER46147; FG02‐03ER46028; AC02-06CH11357; DE‐FG02‐03ER46028
Resource Type:
Journal Article: Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 6; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electrodes; quantum wells; x-ray diffraction; heterojunctions; quantum dots; 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Park, J., Ahn, Y., Tilka, J. A., Sampson, K. C., Savage, D. E., Prance, J. R., Simmons, C. B., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Holt, M. V., and Evans, P. G. Electrode-stress-induced nanoscale disorder in Si quantum electronic devices. United States: N. p., 2016. Web. doi:10.1063/1.4954054.
Park, J., Ahn, Y., Tilka, J. A., Sampson, K. C., Savage, D. E., Prance, J. R., Simmons, C. B., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Holt, M. V., & Evans, P. G. Electrode-stress-induced nanoscale disorder in Si quantum electronic devices. United States. doi:10.1063/1.4954054.
Park, J., Ahn, Y., Tilka, J. A., Sampson, K. C., Savage, D. E., Prance, J. R., Simmons, C. B., Lagally, M. G., Coppersmith, S. N., Eriksson, M. A., Holt, M. V., and Evans, P. G. 2016. "Electrode-stress-induced nanoscale disorder in Si quantum electronic devices". United States. doi:10.1063/1.4954054.
@article{osti_1258327,
title = {Electrode-stress-induced nanoscale disorder in Si quantum electronic devices},
author = {Park, J. and Ahn, Y. and Tilka, J. A. and Sampson, K. C. and Savage, D. E. and Prance, J. R. and Simmons, C. B. and Lagally, M. G. and Coppersmith, S. N. and Eriksson, M. A. and Holt, M. V. and Evans, P. G.},
abstractNote = {Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.},
doi = {10.1063/1.4954054},
journal = {APL Materials},
number = 6,
volume = 4,
place = {United States},
year = 2016,
month = 6
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4954054

Citation Metrics:
Cited by: 1work
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  • Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.
  • Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.
  • Cited by 1
  • We report a study of the dynamic response of electrons in a nanowire or a two-dimensional electron gas under a capacitively coupled ''spot gate'' driven by an AC voltage. A standing wave with wavevector equal to twice the Fermi wavevector is formed near the spot gate and near edges and boundaries, analogous to the static Friedel oscillations near defects at equilibrium. From the spatial modulation and resonance frequencies of the standing Friedel wave (SFW), electronic properties of nanoscale devices, including the Fermi velocity and eigenenergy spacings, can be measured directly.
  • We report a combined experimental and theoretical study of CaCu{sub 3}Ti{sub 4}O{sub 12}. Based on our experimental observations of nanoscale regions of Ca-Cu antisite defects in part of the structure, we carried out density-functional theory (DFT) calculations that suggest a possible electronic mechanism to explain the gigantic dielectric response in this material. The defects are evident in atomically resolved transmission electron microscopy measurements, with supporting evidence from a quantitative analysis of the electron diffraction and DFT which suggests that such defects are reasonable on energetic grounds. To establish the extent of the defects, bulk average measurements of the local structuremore » were carried out: extended x-ray absorption fine structure (EXAFS), atomic pair-distribution function analysis of neutron powder-diffraction data, and single-crystal x-ray crystallography. The EXAFS data are consistent with the presence of the nanoclustered defects with an estimate of less than 10% of the sample being disordered while the neutron powder-diffraction experiments place an upper of -5% on the proportion of the sample in the defective state. Because of the difficulty of quantifying nanoscale defects at such low levels, further work will be required to establish that this mechanism is operative in CaCu{sub 3}Ti{sub 4}O{sub 12} but it presents a nontraditional plausible avenue for understanding colossal dielectric behavior.« less