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Title: Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides

Journal Article · · Physical Review. X

Here, accurate values for polarization discontinuities between pyroelectric materials are critical for understanding and designing the electronic properties of heterostructures. For wurtzite materials, the zincblende structure has been used in the literature as a reference to determine the effective spontaneous polarization constants. We show that, because the zincblende structure has a nonzero formal polarization, this method results in a spurious contribution to the spontaneous polarization differences between materials. In addition, we address the correct choice of "improper" versus "proper" piezoelectric constants. For the technologically important III-nitride materials GaN, AlN, and InN, we determine polarization discontinuities using a consistent reference based on the layered hexagonal structure and the correct choice of piezoelectric constants, and discuss the results in light of available experimental data.

Research Organization:
Univ. of California, Santa Barbara, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-05CH11231; SC0010689
OSTI ID:
1258317
Alternate ID(s):
OSTI ID: 1286005
Journal Information:
Physical Review. X, Journal Name: Physical Review. X Vol. 6 Journal Issue: 2; ISSN 2160-3308
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 105 works
Citation information provided by
Web of Science

References (44)

Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells journal October 1999
Hexagonal A B C Semiconductors as Ferroelectrics journal October 2012
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures journal January 2000
Projector augmented-wave method journal December 1994
Hybrid functionals based on a screened Coulomb potential journal May 2003
Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes journal August 2014
Direct experimental determination of the spontaneous polarization of GaN journal August 2012
Composition dependence of polarization fields in GaInN/GaN quantum wells journal August 2003
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies journal June 2000
Formation of a quasi-two-dimensional electron gas in GaN/AlxGa1−xN heterostructures with diffuse interfaces journal February 2004
Barrier-width dependence of group-III nitrides quantum-well transition energies journal July 1999
Accurate calculation of polarization-related quantities in semiconductors journal April 2001
Special points for Brillouin-zone integrations journal June 1976
Investigation of the Polarization-Induced Charges in Modulation-Doped Al x Ga 1- x N/GaN Heterostructures through Capacitance–Voltage Profiling and Simulation journal April 2002
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set journal October 1996
Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire
  • Arulkumaran, S.; Egawa, T.; Ishikawa, H.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, Issue 2 https://doi.org/10.1116/1.1556398
journal January 2003
Spontaneous polarization and piezoelectric constants of III-V nitrides journal October 1997
Band parameters for nitrogen-containing semiconductors journal September 2003
The piezoelectric coefficient of gallium nitride thin films journal April 1998
Piezoelectric coefficient of aluminum nitride and gallium nitride journal November 2000
Electrical properties of Al x Ga 1-x N/GaN heterostructures with low Al content journal March 2011
Electric polarization as a bulk quantity and its relation to surface charge journal August 1993
Analysis of interface electronic structure in In[sub x]Ga[sub 1−x]N/GaN heterostructures
  • Zhang, H.; Miller, E. J.; Yu, E. T.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 22, Issue 4 https://doi.org/10.1116/1.1768190
journal January 2004
The influence of composition and unintentional doping on the two-dimensional electron gas density in AlGaN/GaN heterostructures journal May 2004
Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation journal December 2003
Extensional piezoelectric coefficients of gallium nitride and aluminum nitride journal December 1999
Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy journal July 2002
Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)] journal June 2006
Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors journal January 2015
Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography journal July 1999
Infrared Lattice Vibrations and Free-Electron Dispersion in GaN journal January 1973
Berry-phase theory of proper piezoelectric response journal February 2000
Strain-induced polarization in wurtzite III-nitride semipolar layers journal July 2006
Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire journal July 1973
Theory of polarization of crystalline solids journal January 1993
Shear piezoelectric coefficients of gallium nitride and aluminum nitride journal December 1999
Dynamics and polarization of group-III nitride lattices: A first-principles study journal September 2000
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure journal August 2012
Macroscopic polarization in crystalline dielectrics: the geometric phase approach journal July 1994
Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications journal May 1999
Semiconductors: Data Handbook book January 2004
Piezoelectricity journal February 1972
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors journal November 1997
Polarization fields of III-nitrides grown in different crystal orientations journal September 2007