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Title: Conductance of a proximitized nanowire in the Coulomb blockade regime

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Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 93; Journal Issue: 23; Related Information: CHORUS Timestamp: 2016-06-23 11:11:05; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

van Heck, B., Lutchyn, R. M., and Glazman, L. I.. Conductance of a proximitized nanowire in the Coulomb blockade regime. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.93.235431.
van Heck, B., Lutchyn, R. M., & Glazman, L. I.. Conductance of a proximitized nanowire in the Coulomb blockade regime. United States. doi:10.1103/PhysRevB.93.235431.
van Heck, B., Lutchyn, R. M., and Glazman, L. I.. 2016. "Conductance of a proximitized nanowire in the Coulomb blockade regime". United States. doi:10.1103/PhysRevB.93.235431.
title = {Conductance of a proximitized nanowire in the Coulomb blockade regime},
author = {van Heck, B. and Lutchyn, R. M. and Glazman, L. I.},
abstractNote = {},
doi = {10.1103/PhysRevB.93.235431},
journal = {Physical Review B},
number = 23,
volume = 93,
place = {United States},
year = 2016,
month = 6

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.93.235431

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Cited by: 10works
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  • We performed measurements at helium temperatures of the electronic transport in the linear regime in an InAs quantum wire in the presence of a charged tip of an atomic force microscope (AFM) at low electron concentration. We show that at certain concentration of electrons, only two closely placed quantum dots, both in the Coulomb blockade regime, govern conductance of the whole wire. Under this condition, two types of peculiarities-wobbling and splitting-arise in the behavior of the lines of the conductance peaks of Coulomb blockade. These peculiarities are measured in quantum-wire-based structures for the first time. We explain both peculiarities asmore » an interplay of the conductance of two quantum dots present in the wire. Detailed modeling of wobbling behavior made in the framework of the orthodox theory of Coulomb blockade demonstrates good agreement with the obtained experimental data.« less
  • We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO{sub 2} substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ{sub ST} ∼ 2.3 meV, a strong spin-orbit interaction of Δ{sub SO} ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductormore » nanostructures for applications in quantum information technologies.« less
  • We show that the parametric correlations of the conductance peak amplitudes of a chaotic or weakly disordered quantum dot in the Coulomb-blockade regime become universal upon an appropriate scaling of the parameter. We compute the universal forms of this correlator for both cases of conserved and broken time-reversal symmetry. For a symmetric dot the correlator is independent of the details in each lead, such as the number of channels and their correlation. We derive a scaling, which we call the rotation scaling, that can be computed directly from the dot{close_quote}s eigenfunction rotation rate or alternatively from the conductance peak heightsmore » and therefore does not require knowledge of the spectrum of the dot. The relation of the rotation scaling to the level velocity scaling is discussed. The exact analytic form of the conductance peak correlator is derived at short distances. We also calculate the universal distributions of the average level width velocity for various values of the scaled parameter. The universality is illustrated in an Anderson model of a disordered dot. {copyright} {ital 1996 The American Physical Society.}« less
  • We derive closed expressions for the universal weak-localization peak of the average conductance peak heights in Coulomb blockade quantum dots in the crossover from orthogonal to unitary symmetry. The scale for the crossover is independent of the number of channels in each lead, in contrast with the case of open dots. The functional form of the weak-localization peak is independent of temperature. We also derive analytically the variance of the conductance peak heights as a function of the crossover parameter. {copyright} {ital 1998} {ital The American Physical Society}
  • The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room temperature. The I–V characteristics of the SI GaAs device reveal nonlinear behavior that appears to be evidence of the Coulomb blockade process as well as the Coulomb oscillations. The sulfur passivation of the SI GaAs device surface results in enormous transformation of the I–V characteristics that demonstrate the strong increase of the resistance and Coulomb blockade regime is replaced by the electron tunneling processes. The resultsmore » obtained are analyzed within frameworks of disordering SI GaAs surface that is caused by inhomogeneous distribution of the donor and acceptor anti-site defects which affects the conditions of quantum- mechanical tunneling. Weak localization processes caused by the preservation of the Fermi level pinning are demonstrated by measuring the negative magnetoresistance in weak magnetic fields at room temperature. Finally, the studies of the magnetoresistance at higher magnetic fields reveal the h/2e Aharonov–Altshuler–Spivak oscillations with the complicated behavior due to possible statistical mismatch of the interference paths in the presence of different microdefects.« less