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Title: Partially depleted GaAs photodiodes degrade with square root of fluence.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1258095
Report Number(s):
SAND2015-3798D
583941
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Poster to hang up in Ion Beam Lab hallway held May 31, 2015 in Albuquerque, NM.
Country of Publication:
United States
Language:
English

Citation Formats

Auden, Elizabeth Catherine, Doyle, Barney Lee, Vizkelethy, Gyorgy, Serkland, Darwin K., and Bossert, David. Partially depleted GaAs photodiodes degrade with square root of fluence.. United States: N. p., 2015. Web.
Auden, Elizabeth Catherine, Doyle, Barney Lee, Vizkelethy, Gyorgy, Serkland, Darwin K., & Bossert, David. Partially depleted GaAs photodiodes degrade with square root of fluence.. United States.
Auden, Elizabeth Catherine, Doyle, Barney Lee, Vizkelethy, Gyorgy, Serkland, Darwin K., and Bossert, David. Fri . "Partially depleted GaAs photodiodes degrade with square root of fluence.". United States. doi:. https://www.osti.gov/servlets/purl/1258095.
@article{osti_1258095,
title = {Partially depleted GaAs photodiodes degrade with square root of fluence.},
author = {Auden, Elizabeth Catherine and Doyle, Barney Lee and Vizkelethy, Gyorgy and Serkland, Darwin K. and Bossert, David},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri May 01 00:00:00 EDT 2015},
month = {Fri May 01 00:00:00 EDT 2015}
}

Conference:
Other availability
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